Characteristics and mechanism study of cerium oxide based random access memories

Hsieh, Cheng Chih; Roy, Anupam; Rai, Amritesh; Chang, Yao‐Feng; Banerjee, Sanjay K.

doi:10.1063/1.4919442

Cited by 43 publications

(34 citation statements)

References 26 publications

(28 reference statements)

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“…Between late 1990 and early 2000, on account of the detection of hysteresis Current-Voltage (I-V) characteristics in oxides with perovskite structure, a great number of works concerning resistive switching (RS) memory based on oxide materials was done. [125,126] Especially, the binary metal oxides attracted great attentions, since they possess extremely simple compositions than perovskite oxides and display excellent resistive switching performance under polycrystalline states. For example, lowtemperature grown or solution-processed TiO 2 , [127,128] Al 2 O 3 thin film, [129,130] as well as CeO x [131] have been investigated.…”

Section: Metal Oxidementioning

confidence: 99%

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

Wang

Zhang

Zhou

et al. 2019

Physica Rapid Research Ltrs

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As one of the five basic components in a modern computer system, memory plays a key role in data storage while the Von Neumann architecture still occupies a principal position in modern digital era. With the rapid development of portable electronic devices, non‐volatile memories are of great importance in human's daily life. High‐performance memory devices are highly demanded, and novel materials applied to flash memory and resistive random access memory (ReRAM) have been widely investigated. The functionalities of memories can be broadened with the development of semiconductor technologies. As a facile and low‐power electromagnetic wave, light can be another modulation medium, which will not bring destructive operation and can enhance the device performance. In this review, the focus is on flash memory and ReRAM based on various functional materials as well as the recent development of photo‐tunable memories.

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Section: Metal Oxidementioning

confidence: 99%

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

Wang

Zhang

Zhou

et al. 2019

Physica Rapid Research Ltrs

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“…The presence of rich oxygen vacancies in CeO 2 endows it with exceptional oxygen storage and release capabilities. For these reasons, recent years have witnessed a surge of research pertaining to using CeO 2 as an insulating layer for memristive systems . For instances, Hsieh et al reported RRAM in Al/CeO x /Au with a low operating voltage and high resistance ratio, Kim fabricated Pt/CeO 2 /Pt device with resistance change >10 5 fold that mimics biological synaptic behaviors.…”

Section: Formation Energies (Eform) Of Polaron In Ceo2 In Presence Ofmentioning

confidence: 99%

Polaronic Resistive Switching in Ceria‐Based Memory Devices

Sun

Hao

Meng

et al. 2019

Adv Elect Materials

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Resistive random access memory (RRAM), or memristors, operating with a voltage‐controlled low‐ and high‐resistance state (ON/OFF), are a critical component for next‐generation nanoelectronics. Most memristors are based on oxides, but the underlying working mechanism remains generally unclear. Using first‐principles calculations, it is revealed that it is polaron that acts as the conducting species to mediate the resistive switching process in CeO2, while the commonly believed oxygen vacancy (VO2+) plays only a secondary role in assisting polaron formation. Importantly, polaron and related complexes have desired low formation energies (≈−0.3 eV) and extremely small migration barriers (≈0.1 eV), to synergistically form conductive filaments in the CeO2 matrix with shallow electronic states near Fermi level, while VO2+ has a much higher migration energy and does not change the insulating nature of CeO2. A switching field is also estimated of ≈3 V between the ON/OFF states from the relative stability of VO2+, Hint+/Hsub+ (institutional/substitutional hydrogen) and polaron complexes in reference to Fermi level, which agrees with experiments. The proposed polaron‐based switching mechanism is general, paving the way for future understanding and design of multifunctional electronic nanodevices beyond RRAM.

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“…Furthermore, the hardware integration of synaptic connections in advanced neural networks requires memristors with multiple resistive states [12,13]. These are challenging requirements and are difficult to implement without significant innovations.The phenomenological principle of memristor device operation is based on the change in the physical properties of a conductive filament (associated with the presence of oxygen vacancies) by applying an electric field across the metal oxide switching layer [14][15][16]. The resulting motion of the oxygen vacancies alters the device resistance between low (Set) and high (Reset) states, depending on the direction and the amplitude of the electric field.…”

mentioning

confidence: 99%

“…The phenomenological principle of memristor device operation is based on the change in the physical properties of a conductive filament (associated with the presence of oxygen vacancies) by applying an electric field across the metal oxide switching layer [14][15][16]. The resulting motion of the oxygen vacancies alters the device resistance between low (Set) and high (Reset) states, depending on the direction and the amplitude of the electric field.…”

mentioning

confidence: 99%

A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems

Hsieh

Roy

Chang

et al. 2016

Applied Physics Letters

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A memristor is a two-terminal 'memory resistor' electronic device, in which a metal oxide switching layer is sandwiched between two metal electrodes [1][2][3][4]. In general, memristors offer non-linear switching characteristics, and materials and process compatibility with advanced silicon manufacturing. These attributes have spurred the exploration of memristors as synaptic devices for realizing spike-based hardware learning systems that are capable of processing unstructured, temporal data [5][6][7][8][9][10]. However, for memristor-based technologies to be viable, the device should exhibit several key characteristics. It should have a compact nanoscale footprint, operate at a voltage close to 1V that is compatible with complementary metal oxide semiconductor (CMOS) technology, have reproducible electrical characteristics, and possess high switching speed to minimize the energy consumption [11]. Furthermore, the hardware integration of synaptic connections in advanced neural networks requires memristors with multiple resistive states [12,13]. These are challenging requirements and are difficult to implement without significant innovations.The phenomenological principle of memristor device operation is based on the change in the physical properties of a conductive filament (associated with the presence of oxygen vacancies) by applying an electric field across the metal oxide switching layer [14][15][16]. The resulting motion of the oxygen vacancies alters the device resistance between low (Set) and high (Reset) states, depending on the direction and the amplitude of the electric field. So far, a variety of structures from a large set of materials (various metal oxide switching layers and metal electrodes) have been studied in the literature [4,17,18]. Several key findings can be drawn from those studies regarding the performance, energy and scalability of this type of devices. The most important finding reveals the trade-off between the switching energy and the data retention time-that is often referred to as voltage-time dilemma [19]. This trade-off is associated with the energy barrier of the device structure. For example, devices made of metal oxides with small energy bandgap (E g ), such as titanium oxide (TiO x , E g~3 .4eV), generally exhibit low operating voltage and compromised data retention [20], while those with large bandgap, such as hafnium oxide (HfO x , E g~5 .4eV) demonstrate the opposite [21]. However, the fabrication of devices with bilayer switching stacks has shown to be effective in mitigating this trade-off. In particular, the improvement in data retention was obtained by the incorporation of an ultra-thin wide bandgap metal oxide capping layer (for example aluminum oxide) [22]. On the other hand, the addition of a reactive capping metal (for example titanium, hafnium, etc.) as an oxygen scavenging layer provided a pathway for reducing the operating voltage of the devices [23,24]. Despite significant advances, a sub-1V memristive device that simultaneously affords built-in analog behavior...

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Characteristics and mechanism study of cerium oxide based random access memories

Cited by 43 publications

References 26 publications

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

Polaronic Resistive Switching in Ceria‐Based Memory Devices

A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems

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