Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas

Song, Sannian; Zhang, Zhonghua; Zhang, Song; Cheng, Yan; Zhu, Yueqin; Guo, Xiaohui; Yin, Wen; Yao, Dongning; Liu, Bo; Feng, Songlin

doi:10.1016/j.tsf.2015.09.032

Thin Solid Films

2015

DOI: 10.1016/j.tsf.2015.09.032

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Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas

Sannian Song

Zhonghua Zhang

Song Zhang

et al.

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2020

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The etching process and mechanism analysis of Ta-Sb₂Te₃ film based on inductively coupled plasma

Xu¹,

Song²,

Fang³

et al. 2020

J. Semicond.

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Compared to the conventional phase change materials, the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability. In this letter, the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar. The results showed that when CF4/Ar = 25/25, the etching power was 600 W and the etching pressure was 2.5 Pa, the etching speed was up to 61 nm/min. The etching pattern of Ta-Sb2Te3 film had a smooth side wall and good perpendicularity (close to 90°), smooth surface of the etching (RMS was 0.51nm), and the etching uniformity was fine. Furthermore, the mechanism of this etching process was analyzed by X-ray photoelectron spectroscopy (XPS). The main damage mechanism of ICP etching in CF4/Ar was studied by X-ray diffraction (XRD).

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The etching process and mechanism analysis of Ta-Sb₂Te₃ film based on inductively coupled plasma

Xu¹,

Song²,

Fang³

et al. 2020

J. Semicond.

Self Cite

View full text Add to dashboard Cite

show abstract

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Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas

Cited by 1 publication

References 10 publications

The etching process and mechanism analysis of Ta-Sb₂Te₃ film based on inductively coupled plasma

The etching process and mechanism analysis of Ta-Sb₂Te₃ film based on inductively coupled plasma

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Characteristics and mechanism of phase change material W0.03Sb2Te etched by Cl2/BCl3 inductively coupled plasmas

Cited by 1 publication

References 10 publications

The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma

The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma

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Product

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The etching process and mechanism analysis of Ta-Sb₂Te₃ film based on inductively coupled plasma

The etching process and mechanism analysis of Ta-Sb₂Te₃ film based on inductively coupled plasma