Characteristic features of the accumulation of vacancy-and interstitial-type radiation defects in dislocation-free silicon with different oxygen contents

Study of Recombination and Electric Properties of p-Si Crystals Irradiated with Electrons

“…Specimens for studying were obtained using the zone melting technique. It is known [21] that the concentration N 0 ≈ 10 16 cm −3 in such specimens is a few orders of magnitude lower than that in specimens obtained using the Czochralski method, N 0 ≈ 10 18 cm −3 . Hence, defects of the C i C s type (interstitial carbon + carbon at the lattice site) rather than CO-centers are mainly formed in such specimens in the course of irradiation.…”

Electro-physical properties of g-exposed crystals of silicon and germanium

“…Due to the radiation influence the defects of structure originate in semiconductors, which create the series of complexes to which correspond different energy levels. Because the electrophysics properties of materials are directly connected with the characteristics of energy levels, identification of the level type and determination of the model for the respective radiation center are devoted by a number of works [15,18,20,24,25,40,[42][43][44][45][46][47][48][49][50][51][52][53][54][55][56][57][58][59]. On the base of analysis of electrophysics properties investigations of γ-exposed Si and Ge crystals it was established that in silicon, due to the creation of radiation centers (so called A-centers), the deep energy level E c -0.17 eV arises in the forbidden gap [15,24].…”