2007
DOI: 10.1016/j.tsf.2006.12.168
|View full text |Cite
|
Sign up to set email alerts
|

Characterisation of ultrasonically sprayed InxSy buffer layers for Cu(In,Ga)Se2 solar cells

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
11
0

Year Published

2009
2009
2019
2019

Publication Types

Select...
9

Relationship

2
7

Authors

Journals

citations
Cited by 38 publications
(12 citation statements)
references
References 10 publications
1
11
0
Order By: Relevance
“…Spraying at various substrate temperatures between 180°C to 290°C does not affect the crystalline structure but an increase in the layer growth rate is observed with rising temperature (not shown here). No other crystalline phases of In x S y , In x O y or In x Cl y are detected in any of the measured films, as also reported earlier [12].…”
Section: Resultssupporting
confidence: 90%
“…Spraying at various substrate temperatures between 180°C to 290°C does not affect the crystalline structure but an increase in the layer growth rate is observed with rising temperature (not shown here). No other crystalline phases of In x S y , In x O y or In x Cl y are detected in any of the measured films, as also reported earlier [12].…”
Section: Resultssupporting
confidence: 90%
“…This is a CdS-free vacuum-free CIGS solar cell. As another example of CdS-free CIGS cell, solar cells by an alternative material, In x S y thin film buffer layers were prepared by ultrasonic spray pyrolysis [68]. In Ref.…”
Section: Other Thin Film Solar Cellsmentioning
confidence: 99%
“…Various methods are under investigation to find an optimum deposition process for this compound -e.g. ALD (Atomic Layer Deposition), thermal evaporation, sputtering, and ultrasonic spray pyrolysis [1][2][3][4][5]. So far the ALD technique is the only indium sulphide deposition method which demonstrated high efficiencies on module areas up to 30×30 cm 2 (max.…”
Section: Introductionmentioning
confidence: 99%