Characterisation of the Junction Temperature of Gallium-Nitride Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter

Sharma, Kanuj; Barón, Kevin Muñoz; Ruthardt, Johannes; Kallfass, Ingmar

doi:10.1049/icp.2021.1149

Cited by 5 publications

(2 citation statements)

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“…Compared to the transient TSEPs of GaN HEMT [23,25], the steady-state TSEPs are the focus of current research. In [26], the threshold voltage exhibits a negative temperature coefficient, and a good linear relationship with junction temperature, whose sensitivity is about 0.84 mV/K. In [22], the saturation voltage with low current injection or conduction resistance can be utilized as TSEPs, exhibiting a positive temperature coefficient and good linearity, and is suitable for GaN HEMT with different gate structures.…”

Section: Introductionmentioning

confidence: 99%

Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices

Wang,

Zhu,

Zhao

et al. 2024

Electronics

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Gallium nitride high-electron-mobility transistor (GaN HEMT) power devices are favored in various scenarios due to their high-power density and efficiency. However, with the significant increase in the heat flux density, the junction temperature of GaN HEMT has become a crucial factor in device reliability. Since the junction temperature monitoring technology for GaN HEMT based on temperature-sensitive electrical parameters (TSEPs) is still in the exploratory stage, the TSEPs’ characteristics of GaN HEMT have not been definitively established. In this paper, for the common steady-state TSEPs of GaN HEMT, the variation rules of the saturation voltage with low current injection, threshold voltage, and body-like diode voltage drop with temperature are investigated. The influences on the three TSEPs’ characteristics are considered, and their stability is discussed. Through experimental comparison, it is found that the saturation voltage with low current injection retains favorable temperature-sensitive characteristics, which has potential application value in junction temperature measurement. However, the threshold voltage as a TSEP for certain GaN HEMT is not ideal in terms of linearity and stability.

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Section: Introductionmentioning

confidence: 99%

Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices

Wang,

Zhu,

Zhao

et al. 2024

Electronics

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“…Although techniques for direct measurement of T j have been developed [6,7], a more widely practiced technique for measuring T j is through one of the device's temperaturesensitive electrical parameters (TSEPs) [8][9][10][11][12][13], such as the threshold voltage (V th ), gate leakage current (I g ), drain current (I d ), or on-resistance (R on ). For Si and SiC power devices, the temperature dependence of any of the TSEPs is strong and well characterized.…”

Section: Introductionmentioning

confidence: 99%

Improved Measurement Accuracy for Junction-to-Case Thermal Resistance of GaN HEMT Packages by Gate-to-Gate Electrical Resistance and Stacking Thermal Interface Materials

Zhang

Buttay

et al. 2022

IEEE Trans. Power Electron.

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Accurate measurements of the junction-to-case thermal resistances of power devices or module packages are necessary for validating the thermal design of the package as well as of the entire converter system. Although accurate measurements can be obtained for Si and SiC packages by the JESD51-14 standard, no standard has been established for GaN packages. A main reason for this shortcoming is the lack of accurate techniques for measuring the device's junction temperature. In this work, a custom package of a (650 V, 150 A) eGaN HEMT with two gate pads was fabricated, and then its junction-to-case thermal resistance was measured by combining two techniques to improve the accuracy: (1) using the device's gate-to-gate electrical resistance as the temperature-sensitive electrical parameter; and (2) measuring the thermal resistance as a function of added layers of thermal interface materials. The first gives a sensitivity of 4.7 mW/ o C and is instantaneous and immune to any transient behavior of the device. The second eliminates the need for accurate measurement of the case temperature. The package's junctionto-case thermal resistance was determined by extrapolating the discrete thermal resistance data points in the plot to zero layer of thermal interface. An analytical expression was derived to guide the extrapolation and was validated by FEA simulations. The measurement procedure was tested using two different thermal interface materials. The difference between the two experimental measurements was within 24%, and both are in good agreement with the simulated result.

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High thermal conductivity diamond-doped silver paste for power electronics packaging

Zhao

Mei

et al. 2022

Materials Letters

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Characterisation of the Junction Temperature of Gallium-Nitride Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter

Cited by 5 publications

References 0 publications

Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices

Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices

Improved Measurement Accuracy for Junction-to-Case Thermal Resistance of GaN HEMT Packages by Gate-to-Gate Electrical Resistance and Stacking Thermal Interface Materials

High thermal conductivity diamond-doped silver paste for power electronics packaging

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