Characterisation of molecular beam epitaxy-grown InGaAs multilayer structures using photoluminescence

Srinivasan, T.; Muralidharan, R.; Mehta, S. K.; Jain, Barsha; Singh, Shantanu; Jain, R. K.; Kumar, V. Senthil

doi:10.1016/s0042-207x(00)00223-2

Cited by 7 publications

(6 citation statements)

References 10 publications

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“…Broadening of the PL spectra indicates that the interfaces and the QW profile are modified by surface effects [13,16]. In the case of samples grown by MBE we have also used RHEED to characterize the smoothness of the growth front and consequently the quality of the interfaces [17].…”

Section: Methodsmentioning

confidence: 99%

The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

Jasik

Wnuk

Gaca

et al. 2009

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

Jasik

Wnuk

Gaca

et al. 2009

Journal of Crystal Growth

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“…Universidad EIA / Rev.EIA.Univ.EIA Para comparar correctamente los valores teóricos con los datos experimentales PL, el pico de energía teórica sin considerar el efecto del campo eléctrico, está dado por la ecuación (7) (δE PL ). En la figura 2 se ubican las posiciones de pico de fotoluminiscencia de tres pozos cuánticos simples de In 0.12 Ga 0.88 As/GaAs en 1.438,1.424 y 1.418 eV para 80, 100 y 120 nm (pentágonos azules) reportados por Srinivasan et al (2001). Los círculos rojos representan las energías calculadas de transiciones sin la segregación de In.…”

Section: Cantidadunclassified

Estudio de la influencia de la segregación de indio y del campo eléctrico interno en las propiedades ópticas de heteroestructuras de pozos cuánticos III-V

Cardona-Bedoya

Sanchez

Mora

2021

reveia

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La segregación superficial de átomos en las aleaciones de semiconductores III-V produce interfaces abruptas y modifica los perfiles del potencial, alternando los estados electrónicos en el pozo cuántico y la energía de emisión en el espectro de fotoluminiscencia. En este trabajo se resuelve mediante serie de potencias la ecuación de Schrödinger considerando un potencial simétrico tipo Cauchy, el cual es suave y decreciente al infinito. Se propone dicho potencial debido a los cambios en el perfil del potencial del pozo cuántico por la segregación de átomos durante el proceso de crecimiento. Se determinó la energía del estado base en función de los parámetros que caracterizan este potencial. Este modelo fue aplicado al caso particular de la segregación de indio en el sistema InGaAs/GaAs. La energía de transición del estado base se calcula a partir de las diferencias de energía entre el electrón y el hueco en función del ancho del pozo. Dichos cálculos están de acuerdo con los picos de energía de fotoluminiscencia reportados. Adicionalmente, la influencia del campo eléctrico debido al efecto piezoeléctrico en la emisión de fotoluminiscencia es estudiada. Para esto se consideró una función de onda variacional de electrones y se calculó la transición de energía del estado base en la región activa de la heteroestructura a partir de las diferencias de energía de electrones y huecos en función del ancho del pozo y del campo eléctrico. Para pozos cuánticos de InGaAs/GaAs la energía base es ajustada dentro de este modelo coincidiendo nuestros cálculos teóricos con la parte experimental.

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“…Indium segregation leads to a deviation from the square well potential profile of the QW and it is necessary that the correct potential profile be used in the calculation to obtain the correct PL transition energies. The modified potential profile was generated taking into consideration the More details regarding the influence of the segregation phenomena on PL transition energies are given in one of the earlier papers [4].…”

Section: Photoluminescencementioning

confidence: 99%

“…The problem of DX centres in the AlGaAs/GaAs systems can be avoided in InGaAs HEMTs by utilizing a lower Al content while maintaining a good conduction band offset. However, the surface segregation of indium [3][4][5], which occurs during the growth of InGaAs alloys by molecular beam epitaxy (MBE), makes it difficult to get a sharp interface at which the two-dimensional electron gas transport takes place. The absence of a sharp interface could degrade the device performance.…”

Section: Introductionmentioning

confidence: 99%

Observation of indium segregation effects in structural and optical properties of pseudomorphic HEMT structures

Mishra¹,

Ramesh²,

Srinivasan³

et al. 2005

Semicond. Sci. Technol.

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We present a detailed study on the influence of several growth related factors such as indium segregation, spacer layer thickness and Si δ doping on the structural, optical and electrical properties of molecular beam epitaxy grown pseudomorphic high electron mobility transistor (P-HEMT) structures. Simulation of a high resolution x-ray diffraction (HRXRD) rocking curve was performed and compared with the experimental data to determine the quantum well (QW) thickness and composition as well as the indium segregation related changes in the QW composition. It is shown that growth of a thin layer (6 Å) of GaAs on top of the pseudomorphic InGaAs layer followed by 'flash-off' at a higher temperature could minimize the indium segregation related degradation of the hetero interface. Photoluminescence (PL) and surface photo voltage (SPV) peaks corresponding to the sub-band transitions are analysed using a self-consistent solution of Schrödinger and Poisson equations. PL results showed the dependence of the transition energies on the spacer layer thickness and the effectiveness of the carrier transfer into the InGaAs well. SPV spectra showed characteristic peaks from all the layers in the HEMT structures and were correlated with the data obtained from PL and HRXRD.

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Characterisation of molecular beam epitaxy-grown InGaAs multilayer structures using photoluminescence

Cited by 7 publications

References 10 publications

The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods

Estudio de la influencia de la segregación de indio y del campo eléctrico interno en las propiedades ópticas de heteroestructuras de pozos cuánticos III-V

Observation of indium segregation effects in structural and optical properties of pseudomorphic HEMT structures

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