Characterisation of frequency response of 1.5 μm InGaAsP DFB laser diode and InGaAs PIN photodiode by heterodyne measurement technique

Schimpe, R.; Bowers, John E.; Koch, Thomas

doi:10.1049/el:19860308

Cited by 55 publications

(19 citation statements)

References 4 publications

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“…16(b)) is to mix the output of two single-frequency lasers in a photodetector and observe the response of the detector to the beat frequency [37], [ S O ] , [51]. Of course, both the power and linewidth of the la-HOTODETECTORS 1347 sers usually must be stabilized.…”

Section: Wn-mentioning

confidence: 99%

Ultrawide-band long-wavelength p-i-n photodetectors

Bowers

Burrus

1987

J. Lightwave Technol.

339

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We compare different designs for very high-speed (millimeter-wave) long-wavelength photodetectors, different materials for such detectors, and different ways of characterizing the speed of these devices. Experimental results are given, showing high-speed response with bandwidths beyond 50 GHz, impulse responses less than 10 ps, and detection sensitivities to 0.1 fJ in packaged devices. Discussed is the inherent bandwidth-efficiency limit in conventional p-i-n detectors, which is then compared to theoretical and experimental results for waveguide-geometry detectors.

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Section: Wn-mentioning

confidence: 99%

Ultrawide-band long-wavelength p-i-n photodetectors

Bowers

Burrus

1987

J. Lightwave Technol.

339

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“…The sign of the LEF is provided by the phase value. With this method, modulation-induced temperature effects are negligible [6]. LEF values between 2 and 5 are routinely measured on QW lasers with this method.…”

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confidence: 99%

Giant linewidth enhancement factor and purely frequency modulated emission from quantum dot laser

et al. 2005

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. . These results should improve the usual quantum well (QW) laser performances, and finally allow the realisation, for example, of chirp-free directly-modulated lasers.However, more disruptive properties can also be explored with quantum dot lasers. In particular, it has been observed that above the ground state (GS) lasing threshold, the gain of the excited state (ES) is not clamped. Owing to the limited number of available GS levels, carriers injected in the ES cannot fully relax to the GS and contribute to increase the ES gain (carrier pile-up). This phenomenon is unique in the semiconductor laser domain, and leads to new device properties. Simultaneous lasing of two allowed transitions, respectively the ground state level transition and the excited state level transition has, for example, already been reported [3].In this Letter we have focused our investigation on a specific regime that appears at currents just below the ES threshold. In particular, we demonstrate that the GS filling implies giant linewidth enhancement factors (LEF) up to 60, far above any reported value for semiconductor lasers. As a result, purely frequency shift keyed (FSK) signal could be achieved by direct modulation of a semiconductor laser.After a brief description of the investigated device, we will present effective linewidth enhancement factor measurements, followed by dynamic measurements near the ES threshold.

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“…Since the optical power of the carrier and sidebands can be easily observed from the optical spectrum, the frequency modulation index can be solved from the above equation. Once is determined, intensity modulation index m can be obtained from the following equation (Schimpe et al, 1986), where is the chirp parameter, namely linewidth enhancement factor, and ω g is the characteristic angular frequency. For a given laser, ω g usually varies in a small range.…”

Section: Frequency Response Of Directly Modulated Lasersmentioning

confidence: 99%

“…For directly modulated laser, the relation between FM and IM indices can be expressed as (Schimpe et al, 1986) g 2…”

Section: Chirp Parameters Of Directly Modulated Lasersmentioning

confidence: 99%