Characterisation of ferroelectric poly(vinylidene fluoride–trifluoroethylene) film prepared by Langmuir‐Blodgett deposition

Kim, Woo Young; Song, Dongfang; Jeon, Gwang-Jae; Kang, In Ku; Shim, Hyunchul; Kim, Do Kyung; Lee, Hee Chul; Park, Hongsik; Kang, Shin‐Won; Bae, Jin‐Hyuk

doi:10.1049/mnl.2015.0038

Cited by 3 publications

(1 citation statement)

References 16 publications

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“…156 The LB method has found to produce nanoscale films of pure and oriented β phase PVDF and PVDF-TrFE. 154,155 These films have been well-characterized in terms of their compositional 157 , optical 154 , morphological 154,158,159 and piezoelectric 154,159 properties. PVDF-TrFE thin films produced by the LB technique show a quasi-monolayer formation behavior, approximately 3.5 nm in thickness and a RMS roughness of 3.1 nm for one layer.…”

Section: Reviewmentioning

confidence: 99%

New developments in composites, copolymer technologies and processing techniques for flexible fluoropolymer piezoelectric generators for efficient energy harvesting

Shepelin

Glushenkov

Lussini

et al. 2019

Energy Environ. Sci.

215

165

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Section: Reviewmentioning

confidence: 99%

New developments in composites, copolymer technologies and processing techniques for flexible fluoropolymer piezoelectric generators for efficient energy harvesting

Shepelin

Glushenkov

Lussini

et al. 2019

Energy Environ. Sci.

215

165

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A large stroke magnetic fluid deformable mirror for focus control

Huang

Kong

2016

Optoelectron. Lett.

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Recent Advances in Flexible Resistive Random Access Memory

Tang

Chen

Qiu

et al. 2022

ASI

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Flexible electronic devices have received great attention in the fields of foldable electronic devices, wearable electronic devices, displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage and processing is an important part. Due to its simple structure and non-volatile characteristics, flexible resistive random access memory (RRAM) is the most likely flexible memory to achieve full commercialization. At present, the minimum bending radius of flexible RRAM can reach 2 mm and the maximum ON/OFF ratio (storage window) can reach 108. However, there are some defects in reliability and durability. In the bending process, the cracks are the main cause of device failure. The charge trap sites provided by appropriate doping or the use of amorphous nanostructures can make the conductive filaments of flexible RRAM steadier. Flexible electrodes with high conductivity and flexible dielectric with stable storage properties are the main development directions of flexible RRAM materials in the future.

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Characterisation of ferroelectric poly(vinylidene fluoride–trifluoroethylene) film prepared by Langmuir‐Blodgett deposition

Cited by 3 publications

References 16 publications

New developments in composites, copolymer technologies and processing techniques for flexible fluoropolymer piezoelectric generators for efficient energy harvesting

New developments in composites, copolymer technologies and processing techniques for flexible fluoropolymer piezoelectric generators for efficient energy harvesting

A large stroke magnetic fluid deformable mirror for focus control

Recent Advances in Flexible Resistive Random Access Memory

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