Characterisation of Cs ion implanted GaN by DLTS

Ngoepe, P.N.M.; Meyer, W.E.; Auret, F.D.; Omotoso, Ezekiel; Hlatshwayo, Thulani Thokozani; Diale, M.

doi:10.1016/j.physb.2017.06.064

Cited by 4 publications

(1 citation statement)

References 16 publications

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“…Such damage not only induces micro-structural change, but also leads to a change in electrical properties. Most of the previous studies were performed on low-energy ion implantation and on the swift heavy ion (SHI) irradiation [21,22,[27][28][29][30][31][32][33], but there have been only a few studies reporting on MEI irradiation [34,35]. Therefore, the investigation of the impacts of MEI irradiation on semiconductors and their device properties is important both from a fundamental and technological point of view.…”

Section: Introductionmentioning

confidence: 99%

Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

et al. 2020

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The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C2+ and 650 keV N2+ ions in the fluence range of 1 × 1013 to 1 × 1015 ions cm−2. The SRIM/TRIM simulations provide quantitative estimations of damage created along the trajectories of ion beams in the device profile. The electrical parameters like Schottky barrier height, series resistance of the Ni/Pd/n-GaN Schottky barrier diodes decreases for a fluence of 1 × 1013 ions cm−2 and thereafter increases with an increase in fluence of 600 keV C2+ and 650 keV N2+ ions. The charge transport mechanism is influenced by various current transport mechanisms along with thermionic emission. Photoluminescence studies have demonstrated the presence of yellow luminescence in the pristine samples. It disappears at higher fluences due to the possible occupancy of Ga vacancies. The presence of the green luminescence band may be attributed to the dislocation caused by the combination of gallium vacancy clusters and impurities due to MEI irradiation. Furthermore, X-ray diffraction studies reveal that there is a decrease in the intensity and shift in the diffraction peaks towards the lower side of two thetas. The reductions in the intensity of C2+ ion irradiation is more when compared to N2+ ion irradiation, which may be attributed to change in the mean atomic scattering factor on a given site for light C2+ ion as compared to N2+ ion.

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