2015
DOI: 10.1088/1748-0221/10/03/c03027
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Characterisation of a CMOS charge transfer device for TDI imaging

Abstract: The performance of a prototype true charge transfer imaging sensor in CMOS is investigated. The finished device is destined for use in TDI applications, especially Earth-observation, and to this end radiation tolerance must be investigated. Before this, complete characterisation is required. This work starts by looking at charge transfer inefficiency and then investigates responsivity using mean-variance techniques.

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Cited by 5 publications
(2 citation statements)
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“…This Frame 5 illumination has been shown in units of V. Each of these devices has a specific value for conversion factor that has been calculated through a mean variance curve responsivity calibration. Further details on how this calibration is carried out can be found in [11]. Table 4 shows the calibration for the DUTs involved in the studies.…”
Section: Image Lag Characterisationmentioning
confidence: 99%
“…This Frame 5 illumination has been shown in units of V. Each of these devices has a specific value for conversion factor that has been calculated through a mean variance curve responsivity calibration. Further details on how this calibration is carried out can be found in [11]. Table 4 shows the calibration for the DUTs involved in the studies.…”
Section: Image Lag Characterisationmentioning
confidence: 99%
“…The CTI has improved considerably over the first prototype 1,2 which means that a more refined method is now needed to accurately measure CTI. In this work we start with a review of the Toad 2 chip and the EPER technique for CTI measurement.…”
Section: Introductionmentioning
confidence: 99%