Chapter 7 Epitaxial layer characterization and metrology

Airaksinen, V.-M.

doi:10.1016/s0080-8784(01)80185-x

Cited by 4 publications

(2 citation statements)

References 27 publications

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“…Thus, layers thicker than 300 nm can be deposited fully strained on patterned Si, allowing an increase of the quantum efficiency of EL. Moreover, it was shown that one source of non-radiative recombination lies at the buffer-substrate interface [23]. This was avoided by burying the interface in a doped buffer layer [18] leading to an increase of the QE by a factor of 10.…”

Section: Introductionmentioning

confidence: 99%

Quantum efficiency of SiGe LEDs

Stoïca

Vescan

2003

Semicond. Sci. Technol.

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The quantum efficiency of p-i-n light emitting diodes with thick fully strained Si 0.80 Ge 0.20 /Si(001) has been studied with the aim to optimize light emission from SiGe. Electroluminescence spectra and external quantum efficiency were measured in a wide range of temperature and injection current for diodes with different thicknesses of the SiGe layer. From the detailed analysis of thickness and injection current dependence of emission, a maximum value for the internal quantum efficiency of 0.5% at 100 K and 0.1% at room temperature were obtained.

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Section: Introductionmentioning

confidence: 99%

Quantum efficiency of SiGe LEDs

Stoïca

Vescan

2003

Semicond. Sci. Technol.

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“…The current standard approach taken in FTIR reflection spectroscopy is to grow the Si thin film layer of interest (LOI) onto a heavily doped wafer (corresponding to a doping concentration greater than 5 × 10 19 cm −3 , and a resistivity of less than 0.025 Ω cm [5]). The incorporation of high concentrations of group 3/5 impurities into the wafer (doping) causes a shift in the refractive index, creating the necessary reflectance at the interface without significantly altering the lattice constant.…”

Section: Introductionmentioning

confidence: 99%

A fast approach to measuring the thickness uniformity of a homoepilayer grown on to any type of silicon wafer

Myronov

Colston

Davies

et al. 2022

Semicond. Sci. Technol.

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Optical reflection spectroscopy techniques offer a non-destructive and fast method of measuring the thickness of silicon (Si) epilayers, enabling very fast thickness uniformity mapping across the full surface of epiwafers up to 450 mm in diameter. However, their use for undoped or low doped epilayers has traditionally been constrained by a dependence on high levels of substitutional doping in the Si wafer, at values of approximately 5 × 1019 cm−3. Whilst the high dopant concentration of this wafer creates the necessary reflectance boundary for optical reflection, their commercial availability is mainly limited to the (001) surface orientation only. Optical reflectance techniques are therefore also limited in use to this orientation. In this article, an approach to measure the thickness of a Si epilayer on any Si wafer, independent of its crystallographic orientation, doping type and value, using Fourier transform infrared reflection spectroscopy is proposed and demonstrated. Because the use of non-destructive optical reflection spectroscopy is already common and well-understood within both industry and academia, this technique could easily be implemented within existing industrial and research fabrication facilities. Furthermore, this approach could be adapted, with further work, to suit other semiconductor materials and other optical reflection techniques.

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