1975
DOI: 10.1016/s0080-8784(08)60334-8
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Chapter 4 The Magnetophonon Effect

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Cited by 21 publications
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“…In 1961, theoretical work by Gurevich and Firsov predicted that inelastic scattering of electrons by phonons can induce oscillations in the magnetoresistance of semiconductors 1 . Magnetophonon resonance (MPR) has since been used to probe spectroscopically electron-phonon interactions in a wide range of bulk semiconductors [2][3][4][5] and semiconductor heterostructures in which carriers are confined in two-dimensions (2D) by a quantum well potential [6][7][8][9][10] .…”
Section: Introductionmentioning
confidence: 99%
“…In 1961, theoretical work by Gurevich and Firsov predicted that inelastic scattering of electrons by phonons can induce oscillations in the magnetoresistance of semiconductors 1 . Magnetophonon resonance (MPR) has since been used to probe spectroscopically electron-phonon interactions in a wide range of bulk semiconductors [2][3][4][5] and semiconductor heterostructures in which carriers are confined in two-dimensions (2D) by a quantum well potential [6][7][8][9][10] .…”
Section: Introductionmentioning
confidence: 99%
“…I n 1961, Gurevich and Firsov [3] predicted that when the electron scattering mechanism is inelastic, as in the case of optical phonons, there will be resonant interaction with the quantized electron orbital motion in a magnet,ic field. Experimental observations of such magnetophonon resonance phenomena have since been reported for various semiconductor materials, and the theory has been refined over the years [4,5]. It is well known that in the transverse configuration with Landau quantization there is no possible description of transport in terms of a Boltzmann equation for a classical phase space distribution function.…”
Section: Introductionmentioning
confidence: 99%