Chapter 4 InP Crystal Growth, Substrate Preparation and Evaluation

Oda, Osamu; Katagiri, Kiyofumi; Shinohara, K.; Katsura, S.; Takahashi, Yuichiro; Kainosho, K.; Kohiro, K.; Hirano, R.

doi:10.1016/s0080-8784(08)62556-9

Cited by 17 publications

(5 citation statements)

References 88 publications

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“…Similarly, it was also found that Fe-doping of InP decreases the pressure of transformation from zincblende to the rock-salt structure [11], which agrees with the results obtained for Se-doped InP [12]. On the other hand, doping with GaAs and InP causes an increase in microhardness, yield point, and also inhibits the generation of dislocations during crystal growth [13][14][15][16][17][18][19]. In other words, doping of GaAs and InP should increase the shear stress required for the generation of dislocations.…”

Section: Ofsupporting

confidence: 81%

“…In contrast, the analysis of experiments carried out for InP crystals (Figure 4b) reveals that the mean contact pressure of the pop-in event is higher for doped crystals. Since InP doping should increase the shear stress for nucleation of dislocations [15][16][17][18][19] and simultaneously decrease of the pressure of phase transformation [11,12], the conclusion can be formulated as follows: plasticity of the InP crystal induced by nanoindentation is initiated by the generation of dislocations.…”

Section: Nanoindentation Experimentsmentioning

confidence: 99%

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Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

et al. 2019

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In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn- and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration.

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Section: Ofsupporting

confidence: 81%

Section: Nanoindentation Experimentsmentioning

confidence: 99%

Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

et al. 2019

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“…Instead of its further development, an increase of the stress led to the creation of new dislocations with a Burgers vector of

and

( Figure 3 d,f). This result demonstrates the phenomenon suggested by a result of the literature data analysis, which indicates that doping the InP causes an increase in microhardness [ 32 ] as well as suppression of the dislocation generation during crystal growth [ 33 , 34 ]. The effect of doping on the development of dislocation structure is of stochastic nature, due to the thermal randomness of both the generation of dislocations and the location of point defects in a crystal lattice.…”

Section: Resultssupporting

confidence: 83%

On Incipient Plasticity of InP Crystal: A Molecular Dynamics Study

2021

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With classical molecular dynamics simulations, we demonstrated that doping of the InP crystal with Zn and S atoms reduces the pressure of the B3→B1 phase transformation as well as inhibits the development of a dislocation structure. On this basis, we propose a method for determining the phenomenon that initiates nanoscale plasticity in semiconductors. When applied to the outcomes of nanoindentation experiments, it predicts the dislocation origin of the elastic-plastic transition in InP crystal and the phase transformation origin of GaAs incipient plasticity.

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“…Although Si can be considered as residual impurity, the Si concentration is under the detection limit of GDMS (< 5 Â 10 14 cm --3 ). Because InP polycrystals were synthesized by the HB (Horizontal Bridgmann) method using a pBN (pyrolytic boron nitride) boat instead of SiO 2 boats [18,32], InP single crystals were purified by the gettering effect of the B 2 O 3 encapsu- [18] and Si remained in the InP melt during crystal growth due to impurity segregation [11,32]. Furthermore, the deep levels of phosphorus related defects have been reported by several authors.…”

Section: Compensation Mechanism Of Annealed Si Inpmentioning

confidence: 99%

Semi-Insulating Behavior of InP Wafers Prepared by Phosphorus Vapor Pressure Controlled Wafer Annealing

Uchida

2002

phys. stat. sol. (b)

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The semi-insulating (SI) behavior of InP wafers prepared with the phosphorus-vapor-pressure controlled annealing method has been investigated. Usually, the carrier concentrations in undoped InP wafers were decreased from the order of 10 15 to 10 14 cm --3 after annealing, but a prominent SI property was not obtained due to insufficient native deep levels for pinning the Fermi level. Transport properties of extremely low Fe doped InP wafers with Fe concentration of 1.5 Â 10 15 cm --3 were converted from conductive to semi-insulating after anneals of either at 950 C for longer than 20 h or at higher than 940 C for 40 h, under the phosphorus vapor pressure of 0.1 MPa. The compensation mechanism by Shockley will explain not only the electrical activation of Fe after annealing, but also the decrease of shallow donors which are related to native defects such as phosphorus vacancies. In this paper, effective annealing conditions for realizing the reproducible production of extremely low Fe doped SI InP have been investigated systematically. Furthermore, a compensation mechanism will also be proposed in connection with it.

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Chapter 4 InP Crystal Growth, Substrate Preparation and Evaluation

Cited by 17 publications

References 88 publications

Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

Origin of Nanoscale Incipient Plasticity in GaAs and InP Crystal

On Incipient Plasticity of InP Crystal: A Molecular Dynamics Study

Semi-Insulating Behavior of InP Wafers Prepared by Phosphorus Vapor Pressure Controlled Wafer Annealing

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