Chapter 3 Silicon and Germanium Avalanche Photodiodes

Kaneda, T.

doi:10.1016/s0080-8784(08)62954-3

Cited by 20 publications

(16 citation statements)

References 74 publications

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“…Unfortunately, avalanche gain is accompanied by noise that is much worse than for photomultipliers, since nonphotogenerated carriers are also subject to avalanche multiplication. Thorough overviews of avalanche photodiode technologies, including underlying principles and devices structures, can be found in [26] and [27].…”

Section: Apdsmentioning

confidence: 99%

A review of photodetectors for sensing light-emitting reporters in biological systems

2003

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A review of photodetectors for optical detection in biological applications is presented. The intent is to provide an overview of the performance metrics and trade-offs among popular photodetectors in order to facilitate an easier match among the photodetector, biological stimulus, and optical pathway. The characteristics and nonidealities of fluorescent and phosphorescent reporters, and the properties of optical components such as filters, lenses, and light sources, are reviewed. By accounting for sources of noise in these components, it is shown how to determine metrics for the optical system that can then be converted to photodetector metrics. Defined photodetector metrics include the quantum efficiency, responsivity, noise-equivalent power, detectivity, gain, dark current, response time, and noise spectrum. The operating principles and performance trade-offs of photodetectors are reviewed, and emphasis is placed on photodetectors for integrated compact systems. Top commercial candidates for photodetectors for detecting light emitted from reporters are the photomultiplier tube, avalanche photodiode, and charge-coupled device. Focus is placed on new developments in complementary metal-oxide-semiconductor structures that can provide low-cost, low-power, and low-voltage alternatives to traditional approaches to biological imaging. Reviewed device structures are presented in the context of supporting the development of laboratory-based instruments and compact fully-integrated systems.

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Section: Apdsmentioning

confidence: 99%

A review of photodetectors for sensing light-emitting reporters in biological systems

2003

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“…1, Si is used as the multiplication material and InGaAs is used as the absorption material in the silicon hetero-interface photodetector (SHIP detector). The structure and/or the electric field profile in this APD is quite different from that of the Manuscript existing Si APD's [9], [IO] and InPhnGaAs APD's [11]- [13] and previous analytical expressions applicable to these earlier detectors are not accurate.…”

Section: Introductionmentioning

confidence: 73%

Frequency response of avalanche photodetectors with separate absorption and multiplication layers

Hawkins

Bowers

1996

J. Lightwave Technol.

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Absiruct-We present analytical expressions for the frequency response of avalanche photodetectors (APD's) with separate absorption and multiplication regions (SAM). The effect of the electric field profile in the multiplication layer on frequency response is considered for the first time. Previous theories have assumed that the multiplication layer is very thin and the peak electric field, which corresponds to the effective multiplication plane, is positioned away from the absorption layer. This is a poor assumption for many devices, and in particular for silicon hetero-interface photodetectors (SHIP'S). We present a theoretical model in which the thickness of the multiplication layer is arbitrary and the peak electric field may be positioned arbitrarily in relation to the absorption layer. We also consider the effects of parasitics, transit-time, and avalanche buildup time. Both front and back illumination from either multiplication layer or absorption layer are considered. The calculated results are compared with experimental results for existing SHIP's and performance predictions are also made for optimized SHIP structures. SHIP APD's with gain-bandwidth product in excess of 500 GHz are possible.

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“…At present long-wavelength transmission systems have achieved better performance with 111-V compound APD's than with Ge APD' s . Ge APD' s have relatively higher dark current, unfavorable ratio of ionization coefficients and low absorption coefficient compared with 111-V compounds APD's at these wavelengths .2°- 21 The APD structure which has achieved very good performance to date has separate absorption and multiplication regions (SAM-APD'S).~~ The APD's of this type utilize InP in the multiplication region and a lattice-matched epitaxial layer of InGaAs in the absorbing region. The SAM APD's were developed to eliminate the tunneling component of the dark current in InGaAs APD's.…”

Section: A Photodetector Characteristicsmentioning

confidence: 99%

Optical data transmission at the Superconducting Super Collider

Leskovar

1990

IEEE Trans. Nucl. Sci.

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Digital and analog data transmissions via fiber optics for the Superconducting Super Collider have been investigated. The state of the art of optical transmitters, low l o s s fiber waveguides, receivers and associated electronics components are reviewed and summarized.Emphasis is placed on the effects of the radiation environment on the performance of an optical data transmission system components. A l s o , the performance of candidate components of the wide band digital and analog transmission systems intended for deployment o f the Superconducting Super Collider Detector is discussed.

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Chapter 3 Silicon and Germanium Avalanche Photodiodes

Cited by 20 publications

References 74 publications

A review of photodetectors for sensing light-emitting reporters in biological systems

A review of photodetectors for sensing light-emitting reporters in biological systems

Frequency response of avalanche photodetectors with separate absorption and multiplication layers

Optical data transmission at the Superconducting Super Collider

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