Chapter 16 Growth and Etching of Semiconductors

Kołasiński, Kurt W.

doi:10.1016/s1573-4331(08)00016-4

Cited by 10 publications

(7 citation statements)

References 482 publications

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“…At the interface, silicide layer is known to be formed which plays a key role in overcoming the large lattice mismatch. On the top of the silicide interlayer, an epitaxial Cu film was grown in the layer-by-layer-like fashion [9,10].…”

Section: Introductionmentioning

confidence: 99%

Effect of temperature, illumination and frequency on the electrical characteristics of Cu/p-Si Schottky diode prepared by liquid phase epitaxy

Farag

Ashery²,

Ahmed

et al. 2010

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Effect of temperature, illumination and frequency on the electrical characteristics of Cu/p-Si Schottky diode prepared by liquid phase epitaxy

Farag

Ashery²,

Ahmed

et al. 2010

Journal of Alloys and Compounds

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“…EUV lithography is considered to be essential to semiconductor manufacturing since it is able to produce a shorter wavelength that allows a greater quantity of electrical circuits to enter a chip [54]. Then, an important step is etching, which is utilized in microfabrication to chemically eradicate layers of a material from the surface of a wafer in order to create a pattern of that material on the substrate [55].…”

Section: Semiconductor Manufacturing Processmentioning

confidence: 99%

A Review of Data Mining Applications in Semiconductor Manufacturing

Espadinha-Cruz

Godina

Rodrigues³

2021

Processes

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For decades, industrial companies have been collecting and storing high amounts of data with the aim of better controlling and managing their processes. However, this vast amount of information and hidden knowledge implicit in all of this data could be utilized more efficiently. With the help of data mining techniques unknown relationships can be systematically discovered. The production of semiconductors is a highly complex process, which entails several subprocesses that employ a diverse array of equipment. The size of the semiconductors signifies a high number of units can be produced, which require huge amounts of data in order to be able to control and improve the semiconductor manufacturing process. Therefore, in this paper a structured review is made through a sample of 137 papers of the published articles in the scientific community regarding data mining applications in semiconductor manufacturing. A detailed bibliometric analysis is also made. All data mining applications are classified in function of the application area. The results are then analyzed and conclusions are drawn.

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“…Different methods can be used for the preparation of the catalytic nanoparticles, including thermal evaporation, sputtering, colloidal solutions; nevertheless, the focus has to remain on the agglomeration of the nanoparticles because the dimension of the clusters strongly influences the diameter of the growing nanowire. Since the nanowire deposition is performed at elevated temperatures, even if the metal forms a thin layer covering the entire substrate, clusters will be formed due to the Ostwald ripening . When the nanowires have a uniform cross‐section along their entire length, the condensation happens mainly at the catalyst surface, and then it diffuses and segregates at the interface with the nanowire.…”

Section: Preparation Techniques and Growth Mechanismsmentioning

confidence: 99%

“…Since the nanowire deposition is performed at elevated temperatures, even if the metal forms a thin layer covering the entire substrate, clusters will be formed due to the Ostwald ripening. 34 When the nanowires have a uniform cross-section along their entire length, the condensation happens mainly at the catalyst surface, and then it diffuses and segregates at the interface with the nanowire. In this case, a uniform catalyst dimension on the substrate should result in a uniform nanowire diameter, if nanoparticles coalescence effect is negligible.…”

Section: Preparation Techniques and Growth Mechanismsmentioning

confidence: 99%

Metal Oxides Mono‐Dimensional Nanostructures for Gas Sensing and Light Emission

et al. 2012

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The present Review opens with an overview of metal oxides and the description of their material properties. The first part mainly deals with various preparation techniques and growth mechanisms, which have been largely developed in the last few decades to fabricate different types of metal oxide nanostructures. The second part, on the other hand, will provide the Reader with an up-to-date summary of different applications in which metal oxides nanostructures have been successfully implemented and/or suggested. In particular, great attention will be dedicated to the implementation of metal oxide nanostructures for gas sensing as well as light emission applications, for which both working principles and integration, as well as the latest reported cutting edge results are herein reported. Finally, we emphasize on the current potentials of metal oxide nanostructured materials and future challenges that this field in continuous expansion is currently facing

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Chapter 16 Growth and Etching of Semiconductors

Cited by 10 publications

References 482 publications

Effect of temperature, illumination and frequency on the electrical characteristics of Cu/p-Si Schottky diode prepared by liquid phase epitaxy

Effect of temperature, illumination and frequency on the electrical characteristics of Cu/p-Si Schottky diode prepared by liquid phase epitaxy

A Review of Data Mining Applications in Semiconductor Manufacturing

Metal Oxides Mono‐Dimensional Nanostructures for Gas Sensing and Light Emission

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