Channel-optimized scalar quantizers with erasure correcting codes

Qiao, Daji; Li, Ye

doi:10.1186/1687-1499-2014-99

Cited by 2 publications

(2 citation statements)

References 24 publications

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“…Recently, the other group IV 2D materials such as silicene, germanene and stanene have attracted great interest [3][4][5][6][7][8][9][10][11] , but it is also difficult to use them as semiconductor devices. Phosphorene, a monolayer of phosphorus, has opened up the field of group V based 2D monolayer materials [12][13][14][15][16][17] . It has an appropriate band gap for electronics applications and is shown to act as a field effect transistor 12 .…”

Section: Introductionmentioning

confidence: 99%

Direct band gaps in group IV-VI monolayer materials: Binary counterparts of phosphorene

2016

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We perform systematic investigation on the geometric, energetic and electronic properties of group IV-VI binary monolayers (XY), which are the counterparts of phosphorene, by employing density functional theory based electronic structure calculations. For this purpose, we choose the binary systems XY consisting of equal numbers of group IV (X = C, Si, Ge, Sn) and group VI elements (Y = O, S, Se, Te) in three geometrical configurations, the puckered, buckled and planar structures. The results of binding energy calculations show that all the binary systems studied are energetically stable. It is observed that, the puckered structure, similar to that of phosphorene, is the energetically most stable geometric configuration. Moreover, the binding energies of buckled configuration are very close to those of the puckered configuration. Our results of electronic band structure predict that puckered SiO and CSe are direct band semiconductors with gaps of 1.449 and 0.905 eV, respectively. Band structure of CSe closely resembles that of phosphorene. Remaining group IV-VI binary monolayers in the puckered configuration and all the buckled monolayers are also semiconductors, but with indirect band gaps. Importantly, we find that the difference between indirect and direct band gaps is very small for many puckered monolayers. Thus, there is a possibility of making these systems undergo transition from indirect to direct band gap semiconducting state by a suitable external influence. Indeed, we show in the present work that seven binary monolayers namely SnS, SiSe, GeSe, SnSe, SiTe, GeTe and SnTe become direct band gap semiconductors when they are subjected to a small mechanical strain (≤ 3 %). This makes nine out of sixteen binary monolayers studied in the present work direct band gap semiconductors. Thus, there is a possibility of utilizing these binary counterparts of phosphorene in future light-emitting diodes and solar cells.

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Section: Introductionmentioning

confidence: 99%

Direct band gaps in group IV-VI monolayer materials: Binary counterparts of phosphorene

2016

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“…This extra-ordinary ability makes TMDs very promising candidates for applications in communications and quantum cryptography. The silicene (Si monolayer with buckled structure) and phosphorene (phosphorus monolayer with puckered structure), on the other hand, have opened up the possibility of the use of group IV/V based 2D materials for electronics applications [9,14,15,16,17]. The silicene allows creation of an electric-field tunable band-gap, but like graphene it is a better conductor of electrons than most TMDs.…”

Section: Introductionmentioning

confidence: 99%

Effect of ferromagnetic exchange field on band gap and spin polarisation of graphene on a TMD substrate

Goswami

2018

Pramana - J Phys

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We calculate the electronic band dispersion of graphene monolayer on a two dimensional transition metal dichalcogenide substrate (GTMD) (viz., XY 2 , X = Mo, W; Y = S, Se) around K and K′ points taking into account the interplay of the exchange field due to the ferromagnetic impurities and the substrate induced, sub-lattice-resolved, strongly enhanced intrinsic spin-orbit couplings(SOC). There are extrinsic Rashba spin-orbit coupling(RSOC) and the orbital gap related to the transfer of the electronic charge from graphene to XY 2 as well. The former allows for external tuning of the band gap in GTMD and connects the nearest neighbors with spin-flip. On account of the strong SOC, the system acts as a quantum spin Hall insulator. We introduce the exchange field (M) in the Hamiltonian to take into account the deposition of Fe atoms on the graphene surface. The cavalcade of the perturbations yield particle-hole symmetric bands with an effective Zeeman field due to the interplay of the substrate induced interactions with RSOC as the prime player. Our graphical analysis with extremely lowlying states strongly suggests the following: The GTMDs like WY 2 exhibit band gap narrowing/widening (Moss-Burstein(MB)gap shift)including the spin-polarization inversion(SPI) at finite but low temperature (T ~ 1 K) due to the increase in the exchange field (M) at the Dirac point K. For graphene on MoY 2 , on the other hand, the occurrence of the MB-shift and the SPI at higher temperature (T ~ 10 K) take place as M is increased at the Dirac point K′ ′ ′ ′. Finally, there is anti-crossing of nonparabolic bands with opposite spins around Dirac points. A direct electric field control of magnetism at the nanoscale is needed here. The magnetic multiferroics, like BiFeO 3 (BFO), are useful for this purpose due to the coupling between the magnetic and electric order parameters.

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Channel-optimized scalar quantizers with erasure correcting codes

Cited by 2 publications

References 24 publications

Direct band gaps in group IV-VI monolayer materials: Binary counterparts of phosphorene

Direct band gaps in group IV-VI monolayer materials: Binary counterparts of phosphorene

Effect of ferromagnetic exchange field on band gap and spin polarisation of graphene on a TMD substrate

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