Channel Material Engineered Nanoscale Cylindrical Surrounding Gate MOSFET with Interface Fixed Charges

Gautam, Rajni; Saxena, Manoj; Gupta, R. S.; Gupta, Mridula

doi:10.1007/978-3-642-22543-7_48

Cited by 2 publications

(2 citation statements)

References 15 publications

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“…By considering the n + /n + /n + doping profile, the doping concentrations for source/drain and channel are equal to N D . The channel length is denoted by L. The interface traps generated by irradiation at semiconductor/oxide boundaries can be expressed by fixed negative charges if the trap level is located beneath the Fermi level, which is valid only for interface traps of acceptor type [12]. …”

Section: Introductionmentioning

confidence: 99%

New junctionless RADFET dosimeter design for low‐cost radiation monitoring applications

Arar¹,

Djeffal²,

Bentrcia³

et al. 2013

Phys. Status Solidi C

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This paper is devoted to the presentation of a quantitative analysis of the Junctionless Gate All Around RADFET (JL GAA RADFET) dosimeter, where the numerical simulation has been carried out using the Atlas 3‐D simulator. The impact of the total dose, alternative gate materials and the channel doping on the threshold voltage of the JL GAA RADFET is addressed. The obtained results have indicated a significant improvement in the subthreshold parameters when compared to the conventional GAA RADFET dosimeter. Therefore, the implementation of junctionless‐based sensors in the near future can provide more accurate results with low costs, in addition to alleviating many difficulties in the measurement procedure. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

New junctionless RADFET dosimeter design for low‐cost radiation monitoring applications

Arar¹,

Djeffal²,

Bentrcia³

et al. 2013

Phys. Status Solidi C

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show abstract

“…However, as the device dimension has been rapidly decreased down to the deep submicrometer regime, the high electric field near the drain junction in the channel will increase the localized interface state and oxide charges, which exist at the semiconductor‐oxide interface . The localized interface state and oxide charges can be transformed into equivalent interface fixed charges which are very close to the drain end . As a result, this will bring about degradation to the device/circuit performance .…”

Section: Introductionmentioning

confidence: 99%

An analytic drain current model for long‐channel undoped gate stack surrounding‐gate MOSFETs including interface fixed charges

Wang

Zhang

Han

et al. 2013

Int J Numerical Modelling

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SUMMARYOn the basis of the exact solution of Poisson's equation and Pao-Sah double integral for long-channel bulk MOSFETs, a continuous and analytic drain current model for the undoped gate stack (GS) surrounding-gate (SRG) metal-oxide-semiconductor field-effect transistor (MOSFET) including positive or negative interface fixed charges near the drain junction is presented. Considering the effect of the interface fixed charges on the flat-band voltage and the electron mobility, the model, which is expressed with the surface and body center potentials evaluated at the source and drain ends, describes the drain current from linear region to saturation region through a single continuous expression. It is found that the surface and body center potentials are increased/decreased in the case of positive/negative interface fixed charges, respectively, and the positive/negative interface fixed charges can decrease/increase the drain current. The model agrees well with the 3D numerical simulations and can be efficiently used to explore the effects of interface fixed charges on the drain current of the gate stack surrounding-gate MOSFETs of the charge-trapped memory device.

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Channel Material Engineered Nanoscale Cylindrical Surrounding Gate MOSFET with Interface Fixed Charges

Cited by 2 publications

References 15 publications

New junctionless RADFET dosimeter design for low‐cost radiation monitoring applications

New junctionless RADFET dosimeter design for low‐cost radiation monitoring applications

An analytic drain current model for long‐channel undoped gate stack surrounding‐gate MOSFETs including interface fixed charges

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