Changes of electronic properties of p-GaN(0 0 0 1) surface after low-energy N+-ion bombardment

Grodzicki, M.; Mazur, Piotr; Ciszewski, A.

doi:10.1016/j.apsusc.2018.01.097

Cited by 22 publications

(21 citation statements)

References 26 publications

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“…This may also stem from the fact that on the ion bombarded surface the photovoltage effect can be weaker or even does not occur at all. This is also consistent with other works [14,23], where N + -ion bombardment was applied.…”

Section: Resultssupporting

confidence: 93%

“…Next, for the Ar + -ions bombardment the Ga 3d is located at a BE of 19.2 eV and 19.45 eV followed by annealing. The energy distance between the Ga 3d peak and the VBM for all samples oscillates around 17.75 eV, which is consistent with previously reported results [14,17,18].…”

Section: Resultssupporting

confidence: 92%

“…The ion bombardment with Ar + or Xe + introduces defects and preferentially remove nitrogen atoms [13]. To prevent the nitrogen depletion low energy N + -ion bombardment may be implemented [14] or combined techniques including ion bombardment followed by a short annealing [11].…”

Section: Introductionmentioning

confidence: 99%

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The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001)

et al. 2019

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Mg-doped GaN(0001) epitaxial layers, grown by molecular beam epitaxy in a setup interconnected with an analytic chamber, were analysed by means of X-ray photoelectron spectroscopy to study their physicochemical properties under different preparation methods. Investigations were carried out for the following samples: asgrown, air-exposed and treated with isopropanol (IPA) or HCl, and in situ cleaned. The X-ray photoelectron spectroscopy results confirmed that the air-exposed samples are contaminated with oxygen and carbon atoms, which can be removed only by in situ cleaning. The valence band maximum varies in the range from 1.2 eV to 2.7 eV below the Fermi level for the as-grown and ex situ prepared samples, respectively. The valence band maximum for in situ cleaned sample is located at 1.7 eV below the Fermi level.

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Section: Resultssupporting

confidence: 93%

Section: Resultssupporting

confidence: 92%

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The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001)

et al. 2019

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“…The valence band edge is located 17.6 eV above the Ga-3d core level. The value is in good agreement with those reported in our previous papers and other works [19][20][21][22][23][24] and indicates that the is accounted to be 4.2 eV and was calculated using the basic formula WF = hv -Ecutoff. The UPS measurements allow us to understand the band structure of the substrate, a common effect, which manifests at the semiconductor surface as band bending (BB).…”

Section: Resultssupporting

confidence: 91%

“…It is the consequence of trapping carriers at surface states, which can come from defects at the surface or have an adsorption nature. The band bending can be determined from the equation BB = (EF -VBM)bulk − (EF -VBM)surf, which has been done with success in our previous paper [24]. The first part (EF -VBM)bulk is exactly the position of the EF relative to the VBM in bulk GaN, which lies in the middle of its gap determined based on the free electron model.…”

Section: Resultsmentioning

confidence: 99%

Studies of early stages of Mn/GaN(0001) interface formation using surface-sensitive techniques

Grodzicki

Mazur

Krupski

et al. 2018

Vacuum

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Non-doped GaN(0001) crystals are used as substrates in this study, on which Mn films are vapour deposited in situ under ultrahigh vacuum (UHV). The early stages of the Mn/GaN(0001) interface formation at room temperature are checked out by means of X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and lowenergy electron diffraction (LEED). Electron affinity for the already cleaned GaN(0001)-(1×1) surface, achieved by thermal cleaning, is 3.5 eV. The binding energy (BE) of the Ga-3d core level line shifts from 20.3 eV to 19.8 eV and the Mn-3p state from 47.6 eV to 47.2 eV upon stepwise Mn deposition due to charge transfer, e.g. Schottky barrier (SB) formation. The splitting of the Mn-2p doublet amounts to 11.2 eV and the Mn-2p3/2 peak has a BE of 638.7 eV, these values corresponding to metallic manganese. The work function of the Mn films with the thickness of 1 nm is 3.4 eV and slightly decreases to 3.2 eV with further overlayer thickness. The SB height of the interface is determined to be 1.2 eV. The Mn films show no LEED patterns. The XPS results, generally, show the absence of any interfacial compound formation.

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p‐GaN Selective Nitridation to Obtain a Normally Off p‐GaN Gate AlGaN/GaN High‐Electron‐Mobility Transistors

Lu,

Yu,

Sun

et al. 2023

Physica Rapid Research Ltrs

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In this article, a method of nitrogen plasma treatment is proposed to achieve normally off p‐GaN/AlGaN/GaN high‐electron‐mobility transistors, and the related mechanism is proposed. A nitrogen plasma treatment is employed to deplete holes in the p‐GaN layer to change the surface characteristics. The transition of the p‐GaN layer from p‐type to n‐type results in the formation of the 2D electron gas at the AlGaN/GaN interface. The X‐ray photoelectron spectroscopy (XPS) testing and the fitting of mechanism for reverse gate leakage current both imply that the nitrogen plasma treatment has a beneficial effect on the surface condition. The device exhibits enhanced performance, with threshold voltage of 1.1 V, on/off ratio of 1 × 109, maximum drain current of 245 mA mm−1, and breakdown voltage of 1215 V.

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Changes of electronic properties of p-GaN(0 0 0 1) surface after low-energy N+-ion bombardment

Cited by 22 publications

References 26 publications

The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001)

The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001)

Studies of early stages of Mn/GaN(0001) interface formation using surface-sensitive techniques

p‐GaN Selective Nitridation to Obtain a Normally Off p‐GaN Gate AlGaN/GaN High‐Electron‐Mobility Transistors

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Changes of electronic properties of p-GaN(0 0 0 1) surface after low-energy N+-ion bombardment

Cited by 22 publications

References 26 publications

The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001)

The Influence of Oxygen and Carbon Contaminants on the Valence Band of p-GaN(0001)

Studies of early stages of Mn/GaN(0001) interface formation using surface-sensitive techniques

p‐GaN Selective Nitridation to Obtain a Normally Off p‐GaN Gate AlGaN/GaN High‐Electron‐Mobility Transistors

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Changes of electronic properties of p-GaN(0 0 0 1) surface after low-energy N+-ion bombardment