Changes in the current density–voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation

Yamaguchi, Seira; Masuda, Atsushi; Ohdaira, Keisuke

doi:10.1016/j.solmat.2016.03.003

Cited by 50 publications

(49 citation statements)

References 30 publications

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“…The short circuit current density (J sc ) and the open circuit voltage (V oc ) are mainly reduced, but the fill factor (FF) is maintained after the PID test. A similar result for PID in an n-type solar cell was reported in the literature [19][20][21]. Based on the result that there is no decrease in the FF for the n-type solar cell PID test and considering that the FF is mostly degraded after PID in the p-type solar cell owing to a decrease in the shunt resistance, it can be considered that the behavior of PID differs according to the type of base and emitter doping.…”

Section: Resultssupporting

confidence: 83%

“…Halm et al [19] have reported PID results for an n-type IBC solar cell with a front floating emitter, and Hara et al [20] have reported PID results for an n-type solar cell with a front p-n junction. In addition, Yamaguchi et al [21] showed the PID results of silicon solar modules having a rear-side emitter fabricated by turning bifacial solar cells upside down. The overall results of PID in solar cell-based n-type wafers showed similar trends.…”

Section: Research Articlementioning

confidence: 99%

“…In addition, Yamaguchi et al. showed the PID results of silicon solar modules having a rear‐side emitter fabricated by turning bifacial solar cells upside down. The overall results of PID in solar cell‐based n‐type wafers showed similar trends.…”

Section: Introductionmentioning

confidence: 99%

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Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction

Bae

Lee

et al. 2017

Energy Science & Engineering

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N-type silicon-based solar cells are currently being used for achieving high efficiency. However, most of the photovoltaic modules already constructed are based on p-type silicon solar cells, and there are few studies on potential induced degradation (PID) in n-type solar cells. In this study, we investigated PID in n-type silicon solar cells with a front p+ emitter. Further, the PID characteristics of n-type solar cells are compared with those of p-type solar cells. The electrical properties of PID in solar cells are observed with the light I-V, quantum efficiency (QE), and electroluminescence (EL). The possible causes for the change in the external quantum efficiency (EQE) after PID are interpreted using PC1D and are discussed by comparing the experimental results with the simulation results. 31

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Section: Resultssupporting

confidence: 83%

Section: Research Articlementioning

confidence: 99%

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Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction

Bae

Lee

et al. 2017

Energy Science & Engineering

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“…Further, all the bias, temperature, and humidity conditions were the same as those used in this study. After 1 day of PID testing, the P max / P max,0 value of the a‐Si, CIGS, and n‐type rear‐emitter c‐Si PV modules decreased to 0.23, 0.95, and 0.93, respectively. When the PID tests were 2 days long, however, the P max / P max,0 for the p‐type c‐Si and n‐type front‐emitter c‐Si PV modules decreased to 0.04 to 0.4 and 0.85, respectively.…”

Section: Discussionmentioning

confidence: 97%

“…We have previously reported PID test results for PID‐prone p‐type c‐Si, conventional superstrate‐type a‐Si thin‐film, CIGS thin‐film, n‐type front‐emitter c‐Si, and n‐type rear‐emitter c‐Si PV modules. Except for the a‐Si thin‐film module, these PV modules had the same module configuration and the same encapsulation materials (the a‐Si thin‐film module had a superstrate configuration; thus, there was no encapsulant between the front glass and the cells).…”

Section: Discussionmentioning

confidence: 99%

Comprehensive study of potential‐induced degradation in silicon heterojunction photovoltaic cell modules

Yamaguchi

Yamamoto

Ohdaira

et al. 2018

Progress in Photovoltaics

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Accelerated tests were used to study potential‐induced degradation (PID) in photovoltaic (PV) modules fabricated from silicon heterojunction (SHJ) solar cells containing tungsten‐doped indium oxide (IWO) transparent conductive films on both sides of the cells and a rear‐side emitter. A negative bias of −1000 V was applied to a module with respect to the cover glass surface in a chamber maintained at 85°C, which significantly reduced the cell's short‐circuit current density (Jsc) within several days. Based on dark current density‐voltage and external quantum efficiency measurements, the reduction in the Jsc was attributed to optical losses rather than carrier recombination. X‐ray absorption fine structure spectroscopy showed the formation of metallic indium (In) in the IWO layers of a degraded cell, which suggests that the root cause of the optical loss was a darkening of the front IWO layers caused by the precipitation of metallic In. In extremely severe PID tests, the SHJ PV modules exhibited not only a further reduction in the Jsc but also a moderate reduction in the open‐circuit voltage (Voc). These Jsc and Voc reductions were probably caused by sodium being introduced into the base region of the cells. A comparison of the PID test results of the SHJ PV modules with those of other types of PV modules indicates that SHJ PV modules have a relatively high resistance to PID. As a module with an ionomer encapsulant exhibited little degradation, their high resistances to PID may be further improved by using encapsulants with high electrical resistances.

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Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

Yamaguchi

Masuda

Marumoto

et al. 2022

Adv Energy and Sustain Res

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Potential‐induced degradation (PID) has been identified as a central reliability issue of photovoltaic (PV) cell modules. Several types of PID depend on the cell structure. Among those types, polarization‐type PID, which is characterized by reductions in short‐circuit current density (JSC) and open‐circuit voltage (VOC), is the fastest PID mode. Additionally, polarization‐type PID occurs readily at room temperature or at markedly low magnitudes of electric potential difference. Therefore, polarization‐type PID is a severe difficulty affecting silicon PV modules. Recently, degradation behavior, preventive measures, and mechanism have been investigated. As described herein, mechanistic aspects of polarization‐type PID are specifically examined and details of a recently proposed model involving a charge accumulation process at K centers in SiNx dielectric layers: the K‐center model are discussed. The K‐center model consistently explains previously reported results of experimentation, which indicates the validity of this model. Discussions presented herein are expected to improve the mechanistic understanding of polarization‐type PID in the PV community and to stimulate further discussions and verifications of the model.

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Changes in the current density–voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation

Cited by 50 publications

References 30 publications

Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction

Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction

Comprehensive study of potential‐induced degradation in silicon heterojunction photovoltaic cell modules

Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

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Changes in the current density–voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation

Cited by 50 publications

References 30 publications

Potential induced degradation of n‐type crystalline silicon solar cells with p+ front junction

Potential induced degradation of n‐type crystalline silicon solar cells with p+ front junction

Comprehensive study of potential‐induced degradation in silicon heterojunction photovoltaic cell modules

Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

Contact Info

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Resources

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Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction

Potential induced degradation of n‐type crystalline silicon solar cells with p⁺ front junction