Abstract:According to the ITRS Roadmap, for 45nm Node (as 65nm Half Pitch), the requirement of Gate CD Control is defined as 2.6nm. One of the most challenging CD errors is Iso-Dense Bias (IDB). Assuming 40% of CD errors are dominated by IDB, IDB should be less than 1nm. In general, the majority of IDB is due to: primarily, exposure toolrelated factors such as aberrations, flare, and sigma fluctuation, and secondly, the change in photoresist characteristics.However, due to the rapidly increasing usage of ArF exposure t… Show more
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