Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits

Schram, T.; Sutar, Surajit; Radu, Iuliana; Asselberghs, Inge

doi:10.1002/adma.202109796

Cited by 40 publications

(22 citation statements)

References 44 publications

(79 reference statements)

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“…[ 66 ] However, their wafer‐scale synthesis is still in the early stages of development, and their production processes are not yet as mature or cost‐effective as those for metal oxides. [ 67 ] As research and development efforts continue and more efficient synthesis methods are developed, the cost‐effectiveness and scalability of wafer‐scale production for these 2D materials are expected to improve.…”

Section: Future Outlookmentioning

confidence: 99%

Exploring the Cutting‐Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material‐to‐Device Engineering

Nikam

Lee

et al. 2023

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Advanced materials and device engineering has played a crucial role in improving the performance of electrochemical random access memory (ECRAM) devices. ECRAM technology has been identified as a promising candidate for implementing artificial synapses in neuromorphic computing systems due to its ability to store analog values and its ease of programmability. ECRAM devices consist of an electrolyte and a channel material sandwiched between two electrodes, and the performance of these devices depends on the properties of the materials used. This review provides a comprehensive overview of material engineering strategies to optimize the electrolyte and channel materials' ionic conductivity, stability, and ionic diffusivity to improve the performance and reliability of ECRAM devices. Device engineering and scaling strategies are further discussed to enhance ECRAM performance. Last, perspectives on the current challenges and future directions in developing ECRAM‐based artificial synapses in neuromorphic computing systems are provided.

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Section: Future Outlookmentioning

confidence: 99%

Exploring the Cutting‐Edge Frontiers of Electrochemical Random Access Memories (ECRAMs) for Neuromorphic Computing: Revolutionary Advances in Material‐to‐Device Engineering

Nikam

Lee

et al. 2023

Small

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“…Incorporating a back-gate on a wafer-scale makes it difficult (or impossible) to control the electrostatics of each transistor’s gate independently. Therefore, for CMOS integration, once again, BEOL compatible solutions are being investigated [ 132 , 133 , 134 , 135 , 136 , 137 ]. However, BEOL integration comes with its own problems, as discussed in the chemiresistive section, in that the thermal budget is significantly reduced, the insulators are of lower quality, and mass production is very challenging.…”

Section: Semiconductor-based Gas Sensor Typesmentioning

confidence: 99%

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Filipovic

Selberherr

2022

Nanomaterials

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During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, and sensors, on the same chip. In the case of gas sensor integration, it is necessary that future devices can be manufactured using a fabrication technology which is also compatible with the processes applied to digital logic transistors. This will likely involve adopting the mature complementary metal oxide semiconductor (CMOS) fabrication technique or a technique which is compatible with CMOS due to the inherent low costs, scalability, and potential for mass production that this technology provides. While chemiresistive semiconductor metal oxide (SMO) gas sensors have been the principal semiconductor-based gas sensor technology investigated in the past, resulting in their eventual commercialization, they need high-temperature operation to provide sufficient energies for the surface chemical reactions essential for the molecular detection of gases in the ambient. Therefore, the integration of a microheater in a MEMS structure is a requirement, which can be quite complex. This is, therefore, undesirable and room temperature, or at least near-room temperature, solutions are readily being investigated and sought after. Room-temperature SMO operation has been achieved using UV illumination, but this further complicates CMOS integration. Recent studies suggest that two-dimensional (2D) materials may offer a solution to this problem since they have a high likelihood for integration with sophisticated CMOS fabrication while also providing a high sensitivity towards a plethora of gases of interest, even at room temperature. This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. This excludes graphene from this review, while recent achievements in gas sensing with graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes are examined.

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“…20,21 With the recent advances in the synthetic growth of 2D semiconductors and gradual improvements in their quality, [22][23][24] the 2D semiconductor/ dielectric interface has become a dominant factor in limiting the device performance. 25,26 Hence, it is imperative to understand the 2D semiconductor/dielectric interface for further improvements in the performance and reliability of 2D material-based devices.…”

Section: Introductionmentioning

confidence: 99%