Challenges of pattern transfer for ultra-low-k OSG film Aurora™ULK

Bliznetsov, Vladimir; Chua, May Lee; Roy, M. M.; Singh, Navab

doi:10.1016/j.tsf.2004.05.044

Cited by 2 publications

(3 citation statements)

References 3 publications

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“…Taylor et al [13] and Abrokwah et al [12] report a decrease in etch rate with increasing pattern density. Our test structures show an increase in etch rate with increasing pattern density, as in [14], [15], if there is any relationship at all, opposite to the trend reported in [12], [13].…”

Section: Etchingcontrasting

confidence: 95%

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Analysis of the impact of linewidth variation on low-k dielectric breakdown

Bashir

Milor

2010

2010 IEEE International Reliability Physics Symposium

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Low-k time-dependent dielectric breakdown (TDDB) has been found to vary as a function of metal linewidth, when the distance between the lines is constant. Modeling requires determining the relationship between TDDB and layout geometries. Therefore, comb test structures have been designed and implemented that vary pattern density and linewidth independently in 45nm technology. Models are computed to estimate TDDB as a function of linewidth, and the cause of variation in TDDB behavior is investigated.

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Section: Etchingcontrasting

confidence: 95%

“…which results in 1 1 2 Figure 14 shows the predicted values of the characteristic lifetime based on (15) for both the E and E models. It can be seen that the model matches the data reasonably well.…”

Section: Variation As a Function Of Electric Field Enhancementmentioning

confidence: 99%

Analysis of the impact of linewidth variation on low-k dielectric breakdown

Bashir

Milor

2010

2010 IEEE International Reliability Physics Symposium

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“…Abrokwah et al [25] and Taylor et al [26] report a decrease in etch rate with increasing pattern density. Our test structures show an increase in etch rate with increasing pattern density, as in [27] and [28], if there is any relationship at all, opposite to the trend reported in [25] and [26].…”

Section: E Etchingcontrasting

confidence: 95%

Impact of Linewidth on Backend Dielectric TDDB and Incorporation of the Linewidth Effect in Full Chip Lifetime Analysis

Bashir

Milor

2015

IEEE Trans. Semicond. Manufact.

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Low-k time-dependent dielectric breakdown (TDDB) has been found to vary as a function of metal linewidth, when the distance between the lines is constant. Modeling requires determining the relationship between TDDB and layout geometries. Therefore, comb test structures that vary pattern density and linewidth independently have been designed and implemented in 45 nm technology. Models are computed to estimate TDDB as a function of linewidth, and the cause of variation in TDDB behavior is investigated. The methodology to use the models for full-chip analysis is explained.Index Terms-Dielectric breakdown, integrated circuit reliability.

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Challenges of pattern transfer for ultra-low-k OSG film Aurora™ULK

Cited by 2 publications

References 3 publications

Analysis of the impact of linewidth variation on low-k dielectric breakdown

Analysis of the impact of linewidth variation on low-k dielectric breakdown

Impact of Linewidth on Backend Dielectric TDDB and Incorporation of the Linewidth Effect in Full Chip Lifetime Analysis

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