Challenges of OPC model calibration from SEM contours

Granik, Yuri; Kusnadi, Ir

doi:10.1117/12.772060

Cited by 13 publications

(7 citation statements)

References 5 publications

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“…In order to preserve this 1D accuracy, the hybrid calibration technique can be used to include CD and SEM-contour in the OPC calibration. The benefits and challenges of the calibration method with hybrid technique were the subject of various articles [1,2]. …”

Section: Opc Model Calibration With Hybrid Techniquementioning

confidence: 99%

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Weighting evaluation for improving OPC model quality by using advanced SEM-contours from wafer and mask

et al. 2012

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OPC modeling has been complex procedure in 28nm node, and it becomes difficult to obtain enough OPC modeling accuracy if calibration is done by using only CD value. Therefore it becomes essential to take pattern shape variation into consideration especially in 2D pattern calibration. Thus utilizing SEM-contour has become important technology. In SPIE advanced lithograpy 2010 [3], Contour-based OPC-modeling by using Advanced SEM-contour which is combined with Fine SEM Edge, alignment and averaging technologies was examined, and model quality was significantly improved. Also, in SPIE advanced lithography 2011, an advanced hybrid OPC modeling which uses 1D CD measurements by CD-SEM and 2D contours created by the advanced SEM-contouring technology and panoramic Mask SEM-contour showed high predictability for both 1D and 2D, even though the relationship between 1D and 2D calibration has trade-off. In this study, weighing function of Calibre ContourCal, a product of Mentor Graphics, was evaluated using the OPC data set same as that used in SPIE2011. The weighting can be set for 1D structure and 2D structure separately. In this paper, the quality of OPC model by applying different weighting is discussed.

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Section: Opc Model Calibration With Hybrid Techniquementioning

confidence: 99%

“…Main challenges are shown in Table 1 and reported [1][2][3][4][5]. Advanced SEM contouring technology which is combined with CD-gap-free contouring [4], Fine SEM Edge (FSE) technology [3], alignment and averaging method on arbitrary structures [3], and panoramic Mask SEM-contouring technology was developed.…”

Section: Introductionmentioning

confidence: 99%

Weighting evaluation for improving OPC model quality by using advanced SEM-contours from wafer and mask

et al. 2012

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“…Model Integrity ¼ 100% × #ðSimulation bridging contours ∩ wafer bridging contoursÞ ÷ #Simulation bridging contours: (7) Table 1 shows detail comparisons between the three models. For FP% and FN% calculations in Eqs.…”

Section: Verification Of Main Feature Modeling On Hotspot Detectionmentioning

confidence: 99%

Applications of large field of view e-beam metrology to contour-based optical proximity correction modeling

Wei,

Kang,

Das

et al. 2023

J. Micro/Nanopattern. Mats. Metro.

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.BackgroundFor complex two-dimensional (2D) patterns, optical proximity correction (OPC) model calibration flows cannot always satisfy accuracy requirements with the standard cutline-based input data. Utilizing after-development inspection e-beam metrology image contours, better model predictions of 2D shapes and wafer hotspots can be realized.AimWe compare model accuracy performance of conventional cutline-based and contour-based OPC models on the regular and hotspots patterns.ApproachBy utilizing image contours that are directly extracted from large field of view (LFoV) e-beam metrology, OPC models were calibrated and verified with both cutline-based and contour-based modeling flows. We also used a wafer sampling plan that contained bridging hotspots. Using that sampling plan, a hotspot-aware three-dimentional resist (R3D) compact model was created.ResultsFirst, a contour-based OPC model was generated with <1 nm root mean square error of contour sites. Compared with cutline-based models, it shows better predictions on 2D feature corners. Second, when combined with a hotspot sampling plan, a hotspot-aware compact model could be generated. The accuracy of hotspot predictions on false positives and false negatives was reduced to around 1% with this approach.ConclusionsOPC model calibration and verification with LFoV image contours provide improved predictions on corner rounding shapes and great potential to increase design space coverage. We also observed improved accuracy of hotspot predictions when using an update hotspot aware model when comparing with that of the OPC model. Furthermore, the combination of R3D and stochastic compact models also demonstrated great potential on predictions of rare wafer failure events.

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“…The need to understand and quantify effects that are specific to 2D structures made contours the most suitable choice [5,6]. However, the usage of contours was limited due to the difficulties encountered while identifying the contours and their consistency to be combined with traditional metrology results [7][8][9]. As the technology for detecting the contours advanced, so did the challenges, with higher levels of noise, lower contrast [10], more complex shapes, multiple layers combination, and tighter specifications.…”

Section: Introductionmentioning

confidence: 99%

The rise of contour metrology from niche solution to versatile enabler

Schuch

Robert

Figueiro

2023

Metrology, Inspection, and Process Control XXXVII

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The concept of using contours from SEM images for improving metrology results on semiconductor manufacturing applications exists for almost over two decades. However, the usage of contours was limited due to the difficulties encountered while identifying the contours and their consistency to be combined with traditional metrology results. As the technology for detecting contours advanced, so did the challenges, with higher levels of noise, lower contrast, more complex shapes, multiple layers combination, and tighter specifications. More recently, with the high level of sophistication attained by contour metrology, different applications and needs in different fields can be addressed by it. One of the most powerful benefits of using contour metrology is the possibility of combining information coming from the image to a layout, augmenting the metrology capability, pattern intent control and pattern quality. This work presents different strategies for obtaining contours from SEM images as well as multiple applications that are now relying on contours for either improving existing capabilities or proposing new ones that enable processes to continue to advance in future technology nodes.

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Challenges of OPC model calibration from SEM contours

Cited by 13 publications

References 5 publications

Weighting evaluation for improving OPC model quality by using advanced SEM-contours from wafer and mask

Weighting evaluation for improving OPC model quality by using advanced SEM-contours from wafer and mask

Applications of large field of view e-beam metrology to contour-based optical proximity correction modeling

The rise of contour metrology from niche solution to versatile enabler

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