Challenges in microcrystalline silicon based solar cell technology

Rech, Bernd; Repmann, T.; Donker, M.N. van den; Berginski, M.; Kilper, T.; Hüpkes, J.; Calnan, Sonya; Stiebig, Helmut; Wieder, S.

doi:10.1016/j.tsf.2005.12.161

Cited by 123 publications

(62 citation statements)

References 20 publications

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“…The formation of poly-Si films on transparent conductive oxides ͑TCOs͒, however, would be an appealing option, especially for the preparation of thin-film solar cells in superstrate configuration because they allow for a simple contacting scheme and light trapping. 8,9 In the case of cells based on a-Si: H or c-Si: H, ZnO:Al is a promising TCO material due to its high stability in hydrogen-rich plasmas. 10 Studies on the stability of ZnO:Al upon treatment at higher temperatures as used for the crystallization of Si have so far concentrated on annealing of thin films on glass under various conditions.…”

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confidence: 99%

“…These kinds of films are usually applied for the development of state-of-the-art amorphous and microcrystalline Si based single and multijunction solar cells. 9 The layers for the ALILE process ͑Al and a-Si͒ were deposited onto the ZnO:Al coated glass by dc magnetron sputtering in argon atmosphere at room temperature. The thicknesses of the Al layer and the a-Si layer were 300 and 375 nm, respectively.…”

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confidence: 99%

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Temperature stability of ZnO:Al film properties for poly-Si thin-film devices

Lee

Becker

Muske

et al. 2007

Applied Physics Letters

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The crystallization of thin silicon films at temperatures between 425 and 600°C was investigated on glass substrates coated with Al-doped zinc oxide (ZnO:Al). Bare ZnO:Al layers degrade at the crystallization temperatures used. A silicon layer on top, however, efficiently prevents deterioration. The resistivity was even found to drop from 4.3×10−4Ωcm for the as deposited ZnO:Al to 2.2×10−4Ωcm in the case of aluminium induced crystallization and to 3.4×10−4Ωcm for solid phase crystallization. The temperature-stable conductivity of ZnO:Al films coated with Si opens up appealing options for the production of polycrystalline silicon thin-film solar cells with transparent front contacts.

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confidence: 99%

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confidence: 99%

Temperature stability of ZnO:Al film properties for poly-Si thin-film devices

Lee

Becker

Muske

et al. 2007

Applied Physics Letters

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“…The boron-and phosphorous-doped (p-and n-) layers and the intrinsic (i-) layer have thicknesses of approximately 20 nm and 1 μm, respectively. More details on the preparation of our baseline solar cells can be found elsewhere [29]. An 80-nm-thick sputtered ZnO:Al layer and a 700-nm-thick evaporated Ag layer were used together as a back electrode.…”

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confidence: 99%

Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

et al. 2015

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The optical and electrical properties of transparent conductive oxides (TCOs), traditionally used in thin-film silicon (TF-Si) solar cells as front-electrode materials, are interlinked, such that an increase in TCO transparency is generally achieved at the cost of reduced lateral conductance. Combining a highly transparent TCO front electrode of moderate conductance with metal fingers to support charge collection is a well-established technique in wafer-based technologies or for TF-Si solar cells in the substrate (n-i-p) configuration. Here, we extend this concept to TF-Si solar cells in the superstrate (p-i-n) configuration. The metal fingers are used in conjunction with a millimeter-scale textured foil, attached to the glass superstrate, which provides an antireflective and retroreflective effect; the latter effect mitigates the shadowing losses induced by the metal fingers. As a result, a substantial increase in power conversion efficiency, from 8.7% to 9.1%, is achieved for 1-µm-thick microcrystalline silicon solar cells deposited on a highly transparent thermally treated aluminum-doped zinc oxide layer combined with silver fingers, compared to cells deposited on a state-of-the-art zinc oxide layer.

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“…[7][8][9][10][11] However, in 2002 a best-cell V oc of 580 mV was reported for c-Si: H solar cells prepared by hot wire deposition. 12 For very high frequency ͑VHF͒ plasma-deposited solar cells a best-cell V oc around 570 mV was reported in 2005 by the application of a hot wire ͑HW͒ deposited buffer layer between the p and i layers.…”

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confidence: 99%

“…The p-i-n solar cells were fabricated on texture-etched ZnO:Al coated glass 8,19 13 For all cells, the i-layer thickness ranged from 1.0 to 1.5 m. ZnO / Ag backcontacts of 1 ϫ 1 cm 2 in size defined the aperture area of the solar cells. A class A double-source solar simulator was used for solar cell characterization.…”

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Microcrystalline silicon solar cells with an open-circuit voltage above 600mV

Donker

Klein

Rech

et al. 2007

Applied Physics Letters

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Microcrystalline silicon solar cells with an open-circuit voltage surpassing the 600mV barrier were prepared by combining the use of a hot wire deposited p-i interface with that of an i layer deposited by radio-frequency parallel plate plasma deposition using controlled SiH4 flow profiling. The control of the bulk and interface properties facilitated effective charge carrier collection from i layers with a crystalline volume fraction as low as ∼30%. Judging from the absorption in the infrared and the excellent charge carrier transport, the optoelectronic properties of this material were still dominated by the crystalline rather than the amorphous phase.

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Challenges in microcrystalline silicon based solar cell technology

Cited by 123 publications

References 20 publications

Temperature stability of ZnO:Al film properties for poly-Si thin-film devices

Temperature stability of ZnO:Al film properties for poly-Si thin-film devices

Highly transparent front electrodes with metal fingers for p-i-n thin-film silicon solar cells

Microcrystalline silicon solar cells with an open-circuit voltage above 600mV

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