Chalcogens as point defects in silicon

Wagner, P.; Holm, C. H.; Sirtl, E.; Oeder, R.; Zulehner, W.

doi:10.1007/bfb0107451

Cited by 32 publications

(14 citation statements)

References 58 publications

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“…The energy states formed by very low concentrations of sulfur, selenium, or tellurium in Si have been known since the 1980 s. [25][26][27] A donor level of about 0.1 eV appears to correspond to that of sulfur-, selenium-, and tellurium-related complexes. However, the origin of the donor level(s) responsible for the observed carrier concentration is not clear due to limited information on the electronic structure of the hyperdoped Si system.…”

Section: Discussionmentioning

confidence: 99%

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Umezu

Warrender

Charnvanichborikarn

et al. 2013

Journal of Applied Physics

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We report the near through mid-infrared (MIR) optical absorption spectra, over the range 0.05-1.3 eV, of monocrystalline silicon layers hyperdoped with chalcogen atoms synthesized by ion implantation followed by pulsed laser melting. A broad mid-infrared optical absorption band emerges, peaking near 0.5 eV for sulfur and selenium and 0.3 eV for tellurium hyperdoped samples. Its strength and width increase with impurity concentration. Its strength decreases markedly with subsequent thermal annealing. The emergence of a broad MIR absorption band is consistent with the formation of an impurity band from isolated deep donor levels as the concentration of chalcogen atoms in metastable local configurations increases. V C 2013 AIP Publishing LLC.

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Section: Discussionmentioning

confidence: 99%

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Umezu

Warrender

Charnvanichborikarn

et al. 2013

Journal of Applied Physics

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“…The field-stop zone of IGBT1 was doped with a deep-level donor, whereas IGBT2 and IGBT3 were doped with a shallow-level donor. Typical donors for a shallow-level doping are phosphorous or arsenic with trap levels about 0.1 eV below the conduction band edge; typical deep donors are selenium or sulfur each with two donor levels of about 0.2 eV and 0.4 eV below the conduction band edge [5,6]. Furthermore, the groups differ in the backside-emitter efficiency tuned by the respective doping dose of the p-emitter.…”

Section: Resultsmentioning

confidence: 99%

Reduction of the temperature dependence of leakage current of IGBTs by field-stop design

Schulze

Voß

Huesken

et al. 2011

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs

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In this paper we propose a new method to reduce the temperature dependence of the leakage current of IGBTs by reducing the temperature dependence of the anode-side current gain α pnp . The temperature dependence of α pnp can be reduced by using field-stop zones that contain doping atoms with deep levels in the band gap of silicon. We demonstrate how the temperature dependence of the leakage current is influenced when using deep-level donors instead of shallow-level donors in the field-stop zone.

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“…Silicon and gallium arsenide are illustrative examples for such limiting situations: In Si only one, rather low abundant isotope exists which carries nuclear spin: 29 Si, 4.7 %, I = 1/2. Consequently, the ESR-linewidth in this semiconductor may be quite narrow, typically of the order of a few gauss (at sufficiently low temperature), and 2 9 Si ligand hyperfine structure is usually resolved in the ESR-spectra.…”

Section: The Nuclear Labelmentioning

confidence: 99%

“…This success could only be achieved by the application of different defect-specific experimental techniques, as ESR, infrared-and transientspectroscopy, in particular by cross-linking photo-ESR spectra with photocapacitance spectra 128]. From their infrared absorption spectra the two ionisation energies of the deep double donors, D0/D+ and D+/D'+, could be determined with spectroscopic precision -thanks to the existence of effective mass like shallow bound excited states just below the conduction band minimum [28,29].…”

Section: S Se and Te In Siliconmentioning

confidence: 99%

Microscopic Identification of Defects in Semiconductors by Electron-Spin-Resonance and Related Techniques

Schneider

1985

MRS Proc.

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This talk will review and compare very basic intrinsic and extrinsic paramagnetic defect structures which are characteristic for group IIB-VI, III-V and elemental semiconductors. The case of cation vacancy related defects in ZnS and ZnSe, that of antisite defects in GaP and GaAs and that of deep impurity donors in IIB-VI semiconductors and silicon will be treated as representative examples, thus illustrating the possibilities (and limitations) of the ESR technique. THE NUCLEAR LABELElectron-spin-resonance (ESR) can be one of the most efficient techniques to unravel the electronic structure of paramagnetic defects in solids. In semiconductors, such defects are first of all formed by shallow donors and acceptors which enable controlled n-type or p-type electrical conductivity of the material. ESR of shallow donors was first reported in 1954, for phosphorous and arsenic doped silicon [1]. A characteristic hyperfine (hf) splitting could be resolved in the ESR-spectra which arises from the coupling o-ft-hedonor electron spin S to that of the donor nucleus, I, see Fig. 1. This nuclear signature (when resolved in an ESR-spectrum) is a strong hint for the chemical identity of an impurity, since it reveals the magnitude of its nuclear spin. If also the associated nuclear magnetic moment can be determined, as by the auxiliary electron-nuclear double resonance (ENDOR) technique, the chemical identification of the defect becomes unambiguous. Alternatively, several hyperfine structure patterns can appear in the ESR-spectrum if the impurity element happens to occur in more than one isotopic species carrying nuclear spin. From the relative splittings and intensities of the individual hyperfine structure patterns the chemical identity of the defect can also be definitely established. Examples for this situation are found for the shallow antimony donors (1 2 1 Sb, 57 2 % I = 5/2; 1 2 3 Sb, 42.8 % I = 7/2), and for the deep tellurium double donors (125Te, 7.0 %, I = 1/2; 1•3Te, 0.9 %, I = 1/2) in silicon.Additional hyperfine couplings exist if also the ligand nuclei of the host carry nuclear spin and moment. Observation of the ligand hyperfine structure splittings (and their anisotropies) may reveal the microscopic symmetry of the lattice site occupied by the defect in question. On the other hand, ligand hf-coupling can also lead to (inhomogeneous) broadening of individual lines in the ESR-spectrum, which may mask microscopic information otherwise apparent.Silicon and gallium arsenide are illustrative examples for such limiting situations: In Si only one, rather low abundant isotope exists which carries nuclear spin: 29 Si, 4.7 %, I = 1/2. Consequently, the ESR-linewidth in this semiconductor may be quite narrow, typically of the order of a few gauss (at sufficiently low temperature), and 2 9 Si ligand hyperfine structure is usually resolved in the ESR-spectra. In contrast, in GaAs all isotopes, 6 9 Ga, 7 1 Ga and 7 5 As, carry nuclear spin, I = 3/2, leading to very broad ESR signals, often far in excess of 100 gauss. Thus, helpfu...

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Chalcogens as point defects in silicon

Cited by 32 publications

References 58 publications

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Reduction of the temperature dependence of leakage current of IGBTs by field-stop design

Microscopic Identification of Defects in Semiconductors by Electron-Spin-Resonance and Related Techniques

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