Chalcogenide passivation of III–V semiconductor surfaces

Бессолов, В. Н.; Лебедев, М. В.

doi:10.1134/1.1187580

Cited by 141 publications

(116 citation statements)

References 169 publications

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“…7 Efficient native oxide removal is crucial because InAs samples are placed directly into the TAM solution without a preceding HCl-etch step typical for GaAs passivation. 1,4,5 The ability to prevent reoxidation and contamination in ambient determines the time available for carrying out any additional chemical steps.…”

Section: Xps Resultsmentioning

confidence: 99%

“…For this coverage regime, however, neither of the two limiting approximations described above (Eqns (3)(4)(5)) is strictly applicable. Therefore, we develop a modified approach -the discrete-layer (DL) model shown schematically in Fig.…”

Section: Discrete-layer Modelmentioning

confidence: 99%

“…In contrast, on the prototypical S-passivated GaAs(001) surface, both Ga-S and As-S components are observed, along with elemental As. 4,5,9 The nearly ideal In-S termination on InAs(001) is likely a result of solubility differences between In-S and As-S in the basic passivating solutions. 7 Qualitatively, the chemical information from XPS data in Plate 1 support the extension of the 'layer-cake' model to TAM-passivated InAs(001).…”

Section: Structure Model and Peak Assignments 'Layer-cake' Structure mentioning

confidence: 99%

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Quantification of discrete oxide and sulfur layers on sulfur‐passivated InAs by XPS

Petrovykh

Sullivan

Whitman

2005

Surface & Interface Analysis

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The initial quality and stability in air of InAs(001) surfaces passivated by a weakly-basic solution of thioacetamide (CH 3 CSNH 2 ) is examined by XPS. The S-passivated InAs(001) surface can be modeled as a sulfur-indium-arsenic 'layer-cake' structure, such that characterization requires quantification of both arsenic oxide and sulfur layers that are at most a few monolayers thick. This thickness range complicates the quantitative analysis because neither standard submonolayer nor thick-film models are applicable. Therefore, we develop a discrete-layer model and validate it with angle-resolved XPS data and electron attenuation length (EAL) calculations. We then apply this model to empirically quantify the arsenic oxide and sulfur coverage on the basis of the corresponding XPS intensity ratios.

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Section: Xps Resultsmentioning

confidence: 99%

Section: Discrete-layer Modelmentioning

confidence: 99%

Section: Structure Model and Peak Assignments 'Layer-cake' Structure mentioning

confidence: 99%

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Quantification of discrete oxide and sulfur layers on sulfur‐passivated InAs by XPS

Petrovykh

Sullivan

Whitman

2005

Surface & Interface Analysis

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“…Specifically, an oxide layer forms during the oxidation process and an undesirable conduction path arises at the oxide/GaSb-based material interface because of the elemental Sb content [51]. Surface states are induced by these native oxides and can cause high surface recombination velocities and large leakage currents [52][53][54][55]. With the intent to improve these surface properties, various chemical treatments have been used to reduce the surface states in GaSb materials and thus improve the properties of the materials.…”

Section: Effects Of Surface States On Gasb Materialsmentioning

confidence: 99%

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

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Groups III-V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

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“…Surface passivation using sulfide-based solutions can effectively remove the native oxide and improve the surface electronic and electrical properties. [5][6][7] Previous studies of the sulfurbased passivation using a ͑NH 4 ͒ 2 S-water solution have shown improved Schottky characteristics with a Au-GaSb barrier of 0.52-0.57 eV being reported. 8,9 The use of an aqueous process however, with and without S passivation, leads to a variety of results in the formation of a Au-GaSb Schottky diode with a wide range of the barrier height values being reported, even exceeding the band-gap energy.…”

mentioning

confidence: 99%

Improved characteristics for Au∕n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation

Liu

Saulys

Kuech

2004

Applied Physics Letters

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The influence of nonaqueous sulfide passivation (using Na 2 S in the inert solvent benzene) on Au/ n-GaSb Schottky junction behavior was studied. The junction parameters, Schottky barrier height and ideality factor, were derived and compared with those of as-received GaSb surfaces as well as surfaces treated with aqueous sulfide solutions. The Schottky junction made on as-received GaSb is highly nonideal, while S-based passivation treatment of the GaSb surface before contact formation improves the rectifying behavior, and markedly reduces the reverse current. A benzene-based nonaqueous sulfide treatment results in GaSb surfaces with lower oxide and elemental antimony content than does the aqueous sulfide treatment. The produced Schottky barrier height increases to 0.61 eV and the Au/ n-GaSb contact is close to an ideal Schottky junction. GaSb is an important III-V compound semiconductor for high-speed and optoelectronic devices operating in the infrared and near-infrared region. 1 Due to its small band gap, there is often difficulty in achieving a high-quality metalGaSb Schottky contact with near-ideal current-voltage ͑I -V͒ characteristics. Surface and interface properties are critical in determining metal-semiconductor contact behavior, and the existence of an interfacial layer, or a high density of defect states at the metal and semiconductor interface, can lead to highly nonideal characteristics. Air oxidation of GaSb at room temperature results in a thick overlayer of native oxide and a high concentration of elemental antimony at the oxideGaSb interface. [2][3][4] The presence of elemental Sb at the surface can lead to device degradation. Due to its metallic nature, Sb can increase the surface leakage current and lead to the generation of gap-region surface states, reducing the minority carrier lifetime and limiting device performance. Surface passivation using sulfide-based solutions can effectively remove the native oxide and improve the surface electronic and electrical properties. [5][6][7] Previous studies of the sulfurbased passivation using a ͑NH 4 ͒ 2 S-water solution have shown improved Schottky characteristics with a Au-GaSb barrier of 0.52-0.57 eV being reported. 8,9 The use of an aqueous process however, with and without S passivation, leads to a variety of results in the formation of a Au-GaSb Schottky diode with a wide range of the barrier height values being reported, even exceeding the band-gap energy. 10 Further improvements in the reproducibility and stability of the Au-GaSb diodes require a thorough removal of surface oxides and elemental Sb which entails a nonaqueous environment. Nonaqueous passivation using an inert solvent, such as benzene, as the sulfidization medium results in a GaSb surface with decreased amounts of oxide residue and elemental Sb content compared to that generated by aqueous sulfide treatment. 7 In this work, the impact of a nonaqueous S-based passivation treatment on the Au/ n-GaSb Schottky junction behavior was studied. In particular, a nonaqueous sulfide passivat...

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Chalcogenide passivation of III–V semiconductor surfaces

Cited by 141 publications

References 169 publications

Quantification of discrete oxide and sulfur layers on sulfur‐passivated InAs by XPS

Quantification of discrete oxide and sulfur layers on sulfur‐passivated InAs by XPS

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

Improved characteristics for Au∕n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation

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