Chain-Scission Polyethers for EUV Lithography

Abstract

This paper describes the synthesis of acid-catalyzed chain-scission polymers and the lithographic results of these polymers in extreme ultraviolet (EUV) resist formulations. These platforms incorporate acid-catalyzed cleavable groups into the polymer backbone. Upon exposure to EUV light and bake, the polymer is transformed from high to low molecular weight segments in the exposed regions. Two polymers were made into resist formulations and tested at Lawrence Berkeley National Laboratories. One of these resists appeared to have highresolution capabilities with modulation down to 14 nm h/p lines.

Fundamental Evaluation of Resist on EUV Lithography at NewSUBARU Synchrotron Light Facility

“…However, these are quite different in CA resist. Generally, since the LWR of PMMA is smaller than that of CA resist, the results of the scattering vector profiles are consistent to the LWR tendency [11].…”

Debondable adhesives and their use in recycling

“…57 More recently, photoacid generators and photo radical initiators have been used for on-demand debonding of multifunctional acrylates, with acid-sensitive cross-linkers (esters, hemiacetals, carboxylates, etc. ), [58][59][60][61][62] and vinyl block copolymers including acid-reactive segments. [63][64][65][66][67][68][69][70] The latter utilises polymers such as poly (iso-butoxy-ethyl acrylate) or poly (isobornyl ester) where photoacid cleavage of the side chain occurs, forming acrylic acid moieties.…”

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

“…Cardineau et al synthesized polymers containing either tertiary aliphatic or tertiary benzylic cleavable ethers. But, further development would be made to overcome damage drawbacks such as serpentine pattern deformation and bridging [69]. In a similar approach, Manouras et al designed and synthesized a random copolymer containing acid-cleavable bonds along the main chain.…”