CF4 plasma etching of materials used in microelectronics manufacturing

Balachova, O. V.; Alves, Marco Túlio Santana; Swart, Jacobus W.; Braga, Edmundo S.; Cescato, Lucila

doi:10.1016/s0026-2692(99)00140-8

Cited by 26 publications

(17 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This result shows that NaOH is a superior resist material compared with the normally used AZ photoresists which have about 0.3-0.7 times faster etching speeds (under CF 4 plasma) than Si. [33] The etching property of NaOH was further utilized for fabricating micropatterned Si with nanoz /µm z /nm : 4 lm). b) 3D AFM image of (a) and its corresponding cross-sectional analysis.…”

Section: Resultsmentioning

confidence: 99%

Transfer Printing Water-Soluble Inorganic Salts

et al. 2006

View full text Add to dashboard Cite

This paper reports the first example of the fabrication of KNO3, K2CO3, CuSO4, NaOH, and mixed‐inorganic‐salt (KNO3 and KOH) patterns using a transfer‐printing (TP) technique. The transfer quality is found to be related to the concentration of the salt solutions. By varying the immersion time, it is possible to control the heights of the raised features of the transfer‐printed salts from the nanoscale to the submicrometer scale. Utilizing these inorganic salts as water‐soluble masks for microfabrication is demonstrated using patterned NaOH films. The use of water as a developer solvent demonstrates the potential utility of the patterning of inorganic salts as a low‐cost, simple, and, more importantly, environmentally friendly route towards accurate patterning of different materials.

show abstract

Section: Resultsmentioning

confidence: 99%

Transfer Printing Water-Soluble Inorganic Salts

et al. 2006

View full text Add to dashboard Cite

show abstract

“…Electron irradiation can turn surfactants into hydrogenated amorphous carbon [201, 202], which is inert for fluorinated etching process [203]. Hence, surfactants can be used as resist material for e-beam lithography in silicon based etching [202].…”

Section: Emerging Applications and Considerationsmentioning

confidence: 99%

Magnetic nanoparticles: material engineering and emerging applications in lithography and biomedicine

et al. 2015

View full text Add to dashboard Cite

We present an interdisciplinary overview of material engineering and emerging applications of iron oxide nanoparticles. We discuss material engineering of nanoparticles in the broadest sense, emphasizing size and shape control, large-area self-assembly, composite/hybrid structures, and surface engineering. This is followed by a discussion of several non-traditional, emerging applications of iron oxide nanoparticles, including nanoparticle lithography, magnetic particle imaging, magnetic guided drug delivery, and positive contrast agents for magnetic resonance imaging. We conclude with a succinct discussion of the pharmacokinetics pathways of iron oxide nanoparticles in the human body –– an important and required practical consideration for any in vivo biomedical application, followed by a brief outlook of the field.

show abstract

“…Plasma etching terbagi menjadi tiga mekanisme, yaitu plasma etching secara fisis, kimia, dan RIE (Reactive Ion Etching). Beberapa penelitian sebelumnya, dilakukan plasma etching SiO2 menggunakan gas CF4 [3]. Penelitian dilakukan dengan sumber generator RF 13,56 MHz pada tekanan 5,8 mbar menghasilkan laju etching SiO2 berkisar antara 50 nm/min untuk daya 70 W. Penelitian lainnya, digunakan gas CF4/O2 dan SF6/O2 sebagai sumber dan pada frekuensi 40 kHz telah dilakukan [4].…”

Section: Pendahuluanunclassified

Ch2FCF3 Gas Flow Rate Effects of SiO2 Plasma Etching Rate on Quartz Crystal Microbalance

Permana

Masruroh

2016

Nat-B

View full text Add to dashboard Cite

ABSTRAKTelah dilakukan penelitian pengaruh laju alir gas pada proses plasma etching di atas permukaan kristal SiO2. Proses plasma etching SiO2 dilakukan dengan menggunakan reaktor plasma model capacitively coupled plasma (CCP). Plasma dibangkitkan dengan daya 100 W menggunakan generator AC berfrekuensi rendah dengan menggunakan gas CH2FCF3. Tujuan dari penelitian ini adalah untuk mempelajari pengaruh dari perubahan aliran gas terhadap laju etching pada permukaan SiO2. Laju alir yang digunakan pada rentang 20 -40 mL/min di mana parameter lainnya dibuat tetap. Profil permukaan SiO2 yang teretching dianalisa menggunakan white-light profilometer (Topography Measurement System (TMS 1200 Micro Lab)). Hasil penelitian menunjukkan proses etching pada permukaan SiO2 dipengaruhi oleh mekanisme secara fisis dan reactive ion etching (RIE) di mana pada laju aliran gas rendah mekanisme secara fisis lebih dominan sedangkan pada laju aliran gas tinggi dipengaruhi oleh mekanisme RIE. Laju etching maksimum yang diperoleh 7,753 nm/min dicapai pada proses plasma etching.Kata Kunci: plasma etching; laju etching; RIE; QCM ABSTRACT Effect of gas flow rate on the surface of quartz crystal SiO2 during plasma etching was studied. The etching process was applied using the capacitively coupled plasma (CCP) reactor generated with 100 W power AC generator at low frequency of 40 kHz using a gas flow of CH2FCF3. The main objective of this study was to determine the effect of changing gas flow rate on the plasma etching rate on the SiO2 surfaces. Gas flow rate was varied between 20-40 mL/min, while keeping all other plasma parameters constant. The etched surface of SiO2 was analyzed using white-light profilometer (Topography Measurement System (TMS 1200 Micro Lab)). The results show the physical etching processes influenced the rate of etching at a low gas flow rate, while the higher flow rate influence reactive ion etching (RIE) in the etching process. The maximum etching rate is found at 7.753 nm / min achieved in plasma etching process.

show abstract

CF4 plasma etching of materials used in microelectronics manufacturing

Cited by 26 publications

References 4 publications

Transfer Printing Water-Soluble Inorganic Salts

Transfer Printing Water-Soluble Inorganic Salts

Magnetic nanoparticles: material engineering and emerging applications in lithography and biomedicine

Ch2FCF3 Gas Flow Rate Effects of SiO2 Plasma Etching Rate on Quartz Crystal Microbalance

Contact Info

Product

Resources

About