CF3+ etching silicon surface: A molecular dynamics study

Zhao, Chengli; Lu, Xionggang; He, Pengjie; Zhang, P.; Zhang, Jingwei; Chen, F.; Gou, Fujun

doi:10.1016/j.vacuum.2011.06.003

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2014

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“…Plasma process has been applied in various manufacturing field, such as micro fablication, surface modification, surface cleaning, and so on [1,2]. As for fabrication of optical components, a high form accuracy without introducing the subsurface damage (SSD) is essential.…”

Section: Introductionmentioning

confidence: 99%

Material Removal Rate Control in Open-Air Type Plasma Chemical Vaporization Machining by Pulse Width Modulation of Applied Power

Takeda

Hata

Endo

et al. 2014

KEM

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Plasma chemical vaporization machining (PCVM) is an ultraprecise figuring technique for optical components without introducing the subsurface damage. In our previous study, the material removal volume was controlled by changing the scanning speed of the worktable. However, because of inertia of the worktable, a discrepancy between the theoretical scanning speed and the actual scanning speed will occur if the spatial change rate of speed is rapid. Therefore, we proposed the application of the pulse width modulation (PWM) control and the amplitude modulation (AM) control of the applied RF power to control the material removal rate (MRR). Experimental results showed that the relationship between the MRR and the average RF power had high linearity, the control range of the PWM control mode was from 0.19 x 10-2 mm3/min to 3.90 x 10-2 mm3/min (from 5% to 100%), which was much wider than that of the AM control mode.

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Section: Introductionmentioning

confidence: 99%