CeScSi- and CeFeSi-type structures in compounds derived from GdTiGe

Study of the structural transition and hydrogenation of CeTiGe

“…In a second study [34], even if neither the exact composition they used for their synthesis nor the form of their samples is provided, they do state that they introduced substitutions of Zr and Nb for Ti and small amounts of Si on the Ge sites. The study of the effect of composition in [29] showed that at least 30 % substitution of Zr or Nb is required on the Ti site to stabilize the CeScSi-form and that low levels of Si substitution on the Ge site (10 %) preserves the coexistence of both forms.…”

“…Hydrogenation of CeScSi [26], GdTiGe [25] and NdScX (X = Si, Ge) [16] shows a drastic decrease or a disappearance of the magnetic ordering. To date only the RTiGe compounds where R = Ce [27,28], Sm [28][29], Gd [25,[29][30] and Tb [31][32] have been shown to adopt both structure types. Morozkin et al [29] have shown that the starting composition plays a role in stabilizing one form over another or a mixture of the two.…”

“…To date only the RTiGe compounds where R = Ce [27,28], Sm [28][29], Gd [25,[29][30] and Tb [31][32] have been shown to adopt both structure types. Morozkin et al [29] have shown that the starting composition plays a role in stabilizing one form over another or a mixture of the two. They found that sub-stoichiometric amounts of Ti stabilized the CeScSi form, that the CeFeSi form could be stabilized by sub-stoichiometric amounts of Ge and that a sub-stoichiometric Gd composition stabilized a mixture of the two structure types.…”

Magnetic properties of the ternary RMgSn (R=Pr, Nd, Sm, Gd–Tm): First series of antiferromagnetic CeScSi-type structure compounds

“…2). The coexistence of these two type structures has been evidenced for the GdTiGe compound [2][3][4], and derived alloys [5]. Recently, this structural transition has been observed by insertion of carbon or boron atoms in the CeFeSi-type RTiGe compounds [6,7].…”

Optical properties and electronic structure of the CeFeSi-type GdTiGe and GdTiSi compounds

“…The compounds RTiGe and RTiSi are of especial interest [1][2][3] and owing to rather high ordering temperature they are promising for practical applications. It has been determined that such a peculiarity could be caused by strong positive indirect exchange R-R interaction of neighboring rare-earth ions via conduction electrons.…”