CeO2 thin films on Si(100) obtained by pulsed laser deposition

Cossarutto, L.; Chaoui, N.; Millon, Éric; Müller, Jean-François; Lambert, Jacques; Alnot, M.

doi:10.1016/s0169-4332(98)00188-3

Cited by 32 publications

(11 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The ratio of fluxes of oxygen and cation governs the oxygen incorporation in the oxide films. 22,23 It can be deduced from Fig. 1 that for a ¼ 0 (region I) where a largely oxygen deficient zinc oxide is formed, the growth conditions are highly reducing (i.e., cations flux largely higher than the oxygen flux).…”

Section: Resultsmentioning

confidence: 99%

On the relevance of large scale pulsed-laser deposition: Evidence of structural heterogeneities in ZnO thin films

Perrière

Hébert

Jedrecy

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

is an open access repository that collects the work of Arts et Métiers ParisTech researchers and makes it freely available over the web where possible. Pulsed-laser deposition is known as a well-suited method for growing thin films of oxide compounds presenting a wide range of functional properties. A limitation of this method for industrial process is the very anisotropic expansion dynamics of the plasma plume, which induces difficulties to grow on large scale films with homogeneous thickness and composition. The specific aspect of the crystalline or orientation uniformity has not been investigated, despite its important role on oxide films properties. In this work, the crystalline parameters and the texture of zinc oxide films are studied as a function of position with respect to the central axis of the plasma plume. We demonstrate the existence of large non-uniformities in the films. The stoichiometry, the lattice parameter, and the distribution of crystallites orientations drastically depend on the position with respect to the plume axis, i.e., on the oblique incidence of the ablated species. The origin of these non-uniformities, in particular, the unexpected tilted orientation of the ZnO c-axis may be attributed to the combined effects of the oblique incidence and of the ratio between oxygen and zinc fluxes reaching the surface of the growing film.

show abstract

Section: Resultsmentioning

confidence: 99%

On the relevance of large scale pulsed-laser deposition: Evidence of structural heterogeneities in ZnO thin films

Perrière

Hébert

Jedrecy

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Cubic fluorite CeO 2 has an excellent lattice matching with silicon (misfit factor of 0.35%), so it is expected to be one of the promising buffer layers that combine silicon and various oxides exhibiting superior properties such as high-Tc superconductivity [1,13] or ferroelectricity [14]. Also, due to its relatively high dielectric constant (E26), CeO 2 was known to be a good candidate as the ultra-thin gate-insulating layer on Si, which was expected to enable the scaling down of the silicon based devices [15][16][17]. Recently, cerium oxide has drawn a lot of attention, because of its technological importance in catalysis [18].…”

Section: Introductionmentioning

confidence: 99%

Rapid thermal annealing of cerium dioxide thin films sputtered onto silicon (111) substrates: Influence of heating rate on microstructure and electrical properties

Guhel

Toloshniak

Bernard

et al. 2015

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

“…Cerium oxide plays an important role in electrochromic devices [6] as a substrate for high temperature superconductors [7], silicon-oninsulator (SOI) structures [8,9], miniaturized capacitors [10,11], counter electrode in smart windows due to its high transparency [12,13]. Various techniques have been employed to prepare cerium oxide and gadolinium doped cerium oxide thin films, such as sol-gel method [14], sputtering [15], electron beam evaporation [16], metal organic chemical vapor deposition [17], atomic layer * E-mail: nagarajuphysics@gmail.com deposition [18], spray pyrolysis [19] and pulsed laser deposition (PLD) [20][21][22][23]. Pulsed laser deposition is the most predominant method of all aforesaid techniques as it produces layers with high uniformity, good stoichiometry as well as free from contamination, which could arise during the deposition process.…”

Section: Introductionmentioning

confidence: 99%

Preparation and microstructural characterization of Si(100) Ce1−x GdxO2−δ thin films prepared by pulsed laser deposition technique

Nagaraju¹,

Vijayakumar

Phase³

et al. 2014

Materials Science-Poland

View full text Add to dashboard Cite

Microstructural properties of Ce 1−x Gd x O 2−δ (x = 0 to 0.3) thin films prepared by pulsed laser deposition technique were studied. The thin films were deposited on Si(100) substrate at a substrate temperature of 973 K at the oxygen partial pressure of 0.2 Pa using KrF excimer laser with energy of 220 mJ. The prepared thin films were characterized by X-ray diffraction, Raman spectroscopy and atomic force microscopy. X-ray diffraction analysis confirmed the polycrystalline nature of the thin films. Crystallite size, strain and dislocation density were calculated. The Raman studies revealed the formation of Ce-O with the systematic variation of peak intensity and full width half maxima depending on concentration of gadolinium dopant. The thickness of the films was estimated using Talystep profiler. The surface roughness was estiamted based on AFM.

show abstract

CeO2 thin films on Si(100) obtained by pulsed laser deposition

Cited by 32 publications

References 11 publications

On the relevance of large scale pulsed-laser deposition: Evidence of structural heterogeneities in ZnO thin films

On the relevance of large scale pulsed-laser deposition: Evidence of structural heterogeneities in ZnO thin films

Rapid thermal annealing of cerium dioxide thin films sputtered onto silicon (111) substrates: Influence of heating rate on microstructure and electrical properties

Preparation and microstructural characterization of Si(100) Ce1−x GdxO2−δ thin films prepared by pulsed laser deposition technique

Contact Info

Product

Resources

About