Cellulose‐Derivative‐Based Gate Dielectric for High‐Performance Organic Complementary Inverters

Abstract

(>80%), [ 25,35,37,38 ] only few of those can combine low-voltage operation with high gain and suffi cient immunity against electrical noise. [ 39 ] Moreover, there have been few investigations of the infl uence of hysteresis and threshold voltage shifts on the inverter characteristics, which typically gives rise to electrical instabilities and performance limitations of those devices. [ 32,39 ] The inverter's noise margin is the most critical parameter, since it directly determines the maximum complexity of circuits. [ 22 ] Particularly, interesting applications of organic electronic circuits are found in analog electronics that allow for the read-out and processing of signals from printed large-area sensors and form an interface to silicon electronics. Examples are analog-to-digital (A/D) converters, operational amplifi ers, and comparators, all including several tens of transistors, thus requiring both high gain and a large noise margin to be functional as well as suffi cient processability.It is interesting to note that the majority of organic complementary inverters already mentioned [24][25][26][27][28][29][30][31][32][33][34][36][37][38][39][40] relied on pentacene as the p-type semiconductor (14 incidences), fl uorinated copper phthalocyanine (6 incidences), or N , N ′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (5 incidences) as the n-type material. On the contrary, the variation in gate dielectric materials that are used is much higher with an emphasis on hybrid dielectric systems. Hybrid systems allow accounting for both a high dielectric breakdown voltage and an engineered interface to the semiconductor. Moreover, the implementation of biodegradable and biocompatible materials represents a new niche in the organic electronics research, aimed to address the issues of cost and toxicity to humans and environment posed by nowadays electronics, a topic that was recently reviewed elsewhere. [41][42][43] Accordingly, we have demonstrated the usage of a novel hybrid and biodegradable highk gate dielectric material system based on a cellulose derivative for low-voltage complementary organic circuits with exceptional high noise margins. [ 35 ] Previous work done in our laboratories demonstrated the fabrication feasibility of complex circuits, where the electrode patterning was performed by a self-aligned photolithography technique. [ 44,45 ] This process can easily be transferred to an anodized aluminum (Al 2 O 3 ) + trimethylsilyl cellulose (TMSC) based bilayer system; the respective results will be published soon.To follow on this preliminary work we have developed an extraordinarily well-performing complementary inverter technology based on a hybrid dielectric composed of a bilayer of alumina (Al 2 O 3 ) and trimethylsilyl cellulose (TMSC) and pentacene or C 60 for the p-channel and the n-channel organic semiconductor, respectively. It outperforms any inverter reported so far with respect to the combination of excellent key parameters, such as record DC gain of above 500 V/V, low operation voltage o...

Low‐Voltage, High‐Frequency Organic Transistors and Unipolar and Complementary Ring Oscillators on Paper

“…[52,53] Therefore, we also fabricated and investigated n-channel TFTs on banknotes, using Polyera ActivInk N1100 as the semiconductor. [52,53] Therefore, we also fabricated and investigated n-channel TFTs on banknotes, using Polyera ActivInk N1100 as the semiconductor.…”

Layer‐by‐Layer Assembled 2D Montmorillonite Dielectrics for Solution‐Processed Electronics

“…The exfoliated MTM nanosheets are negatively charged on the basal plane, leading to aqueous dispersions that are stable with respect to aggregation or precipitation for several months (Figure 1 b). [ 12,13 ] However, these approaches typically require time-consuming precautions to achieve highly uniform and defect-free fi lms, which are essential for electronic applications. The MTM nanosheets have a uniform distribution of thicknesses averaging ≈1.6 nm (Figure 1 d,e), which Self-assembly based on the manipulation of noncovalent intermolecular forces has garnered signifi cant attention in solution-processed nanoelectronics, particularly for dielectric capacitive components.…”

“…[ 4,5 ] For example, the self-assembly of monolayer or multilayer organic molecules into dielectric fi lms has been employed for ultralow power FETs and complementary circuits. [ 12,13 ] However, these approaches typically require time-consuming precautions to achieve highly uniform and defect-free fi lms, which are essential for electronic applications. For example, 2D inorganic sheets have been tiled into dielectrics with κ over 200 using Langmuir-Blodgett (LB) assembly, [ 8 ] although their electronic device applications remain largely unexplored.…”

Renewable polymeric materials for electronic applications

“…[75][76][77][78] For example, a pentacene-based organic field-effect transistor with a crosslinked cyanoethyl pullulan dielectric layer was found to operate under a low gate voltage of − 3 V with a remarkably high mobility of~8.62 cm 2 V − 1 s − 1 , an on/off current ratio of~10 5 , and a steep sub-threshold slope of 0.099 V per dec. 75 Furthermore, Beaulieu and co-workers added ZrO 2 nanoparticles to neat cyanoethyl pullulan as physical crosslinks to eliminate the charge-trapping effect and improve the stability and performance of the P3HT transistor devices. 77 In addition to functionalized pullulan, Petritz et al 78 demonstrated the use of trimethylsilyl cellulose as an organic/inorganic bilayer gate dielectric for organic field-effect transistors and complementary inverters, as shown in Figure 13. Using this bilayer dielectric, the fabricated pentacene-and C 60 Charge-trapping electrets in organic field-effect transistor memory As mentioned, using modified cellulose as the dielectric layer in transistor devices results in a different device performance because the concentration of the induced charge carrier at the dielectric/ semiconductor interface is very different from traditional dielectrics.…”