Ce-Si (Cerium-Silicon)

Okamoto, H.

doi:10.1007/s11669-011-9933-7

Cited by 3 publications

(3 citation statements)

References 3 publications

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“…6 provide evidence for the formation of a cerium silicide bearing phase, with possibly some O contribution. 29 Literature indicates that there are six different phases of cerium silicides 30,31 32 These are summarized, along with the respective Ce and Si contents (in at.%) and oxidation states in Table I. The phase labeled "unknown phase" is the phase found at the intermixed zone in this study.…”

Section: Resultsmentioning

confidence: 75%

“…provide evidence for the formation of a cerium silicide bearing phase, with possibly some O contribution . Literature indicates that there are six different phases of cerium silicides: Ce 5 Si 3 , Ce 3 Si 2 , Ce 5 Si 4 , CeSi, Ce 3 Si 5 , and CeSi 2 ; and various oxides including CeSiO 3 , Ce 2 Si 2 O 7 , and CeSiO 4 . These are summarized, along with the respective Ce and Si contents (in at.%) and oxidation states in Table .…”

Section: Resultsmentioning

confidence: 96%

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Ion‐Beam‐Induced Chemical Mixing at a Nanocrystalline CeO₂–Si Interface

et al. 2013

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Thin films of nanocrystalline ceria deposited onto a silicon substrate have been irradiated with 3 MeV Au+ ions to a total dose of 34 displacements per atom to examine the film/substrate interfacial response upon displacement damage. Under irradiation, a band of contrast is observed to form that grows under further irradiation. Scanning and high‐resolution transmission electron microscopy imaging and analysis suggest that this band of contrast is a cerium silicate phase with an approximate Ce:Si:O composition ratio of 1:1:3 in an amorphous nature. The slightly nonstoichiometric composition arises due to the loss of mobile oxygen within the cerium silicate phase under the current irradiation condition. This nonequilibrium phase is formed as a direct result of ion‐beam‐induced chemical mixing caused by ballistic collisions between the incoming ion and the lattice atoms. This may hold promise in ion beam engineering of cerium silicates for microelectronic applications e.g., the fabrication of blue LEDs.

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Section: Resultsmentioning

confidence: 75%

Section: Resultsmentioning

confidence: 96%

Ion‐Beam‐Induced Chemical Mixing at a Nanocrystalline CeO₂–Si Interface

et al. 2013

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“…Fm3m), unit cell parameters of a ¼ 0.5323 nm and z ¼ 4, and a NaCl-type structure. [22,23] The compound exhibits the metallic conductivity and, at a temperature of %0.3 K, passes to the superconducting state. [24] The LuS and TmS lattice constants [20] differ from MnS one by 2% and 3.7%, respectively.…”

Section: Introductionmentioning

confidence: 99%

Magnetoresistance and Electric Polarization in the Lu_xMn_1–xS Compound

Aplesnin

Sitnikov

Харьков

et al. 2022

Physica Status Solidi (b)

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Using the Hall effect measurements, it is established that the sign of carriers in the LuxMn1–xS solid solutions changes upon temperature and concentration variations. The extrema in the temperature dependence of the electrical resistance and hysteresis of the electric polarization are found. The change in the sign of the exchange coupling between the nearest neighbors under electron doping is established. The magnetoresistance in the paramagnetic region is caused by the change in the induced electric polarization in a magnetic field.

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Computational Analysis of SiC Crystal Growth from Silicon Melt Diluted with Cr, Fe, Co, Ni, Y, Al, La, Ce, Pr, Nd, and Sc. Part 1

Vorob’ev

2024

Rev. Adv. Mater. Technol.

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The effect of various co-solvents on silicon carbide growth from solutions is sequentially analyzed within computational approach. The information related to the problem is collected from available literature and thoroughly treated. Boundary between liquid and solid state of solutions (liquidus line) is found from phase diagrams of 11 binary systems and is accounted for in calculating the carbon solubility at temperature and composition varying in a wide range. Thermophysical and transport properties are collected for preliminary estimation and comparison of growth rates. Their saturation with co-solvent percentage is predicted. Two-dimensional problem is set and first computations are demonstrated. It is shown that addition of lanthanum to the silicon melt gives a significantly higher growth rate than that of chromium.

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Ce-Si (Cerium-Silicon)

Cited by 3 publications

References 3 publications

Ion‐Beam‐Induced Chemical Mixing at a Nanocrystalline CeO₂–Si Interface

Ion‐Beam‐Induced Chemical Mixing at a Nanocrystalline CeO₂–Si Interface

Magnetoresistance and Electric Polarization in the Lu_xMn_1–xS Compound

Computational Analysis of SiC Crystal Growth from Silicon Melt Diluted with Cr, Fe, Co, Ni, Y, Al, La, Ce, Pr, Nd, and Sc. Part 1

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Ce-Si (Cerium-Silicon)

Cited by 3 publications

References 3 publications

Ion‐Beam‐Induced Chemical Mixing at a Nanocrystalline CeO2–Si Interface

Ion‐Beam‐Induced Chemical Mixing at a Nanocrystalline CeO2–Si Interface

Magnetoresistance and Electric Polarization in the LuxMn1–xS Compound

Computational Analysis of SiC Crystal Growth from Silicon Melt Diluted with Cr, Fe, Co, Ni, Y, Al, La, Ce, Pr, Nd, and Sc. Part 1

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Ion‐Beam‐Induced Chemical Mixing at a Nanocrystalline CeO₂–Si Interface

Ion‐Beam‐Induced Chemical Mixing at a Nanocrystalline CeO₂–Si Interface

Magnetoresistance and Electric Polarization in the Lu_xMn_1–xS Compound