Ce Doped Germanium Dioxide Nanowires and Solar Light Photocatalytic Performance

Tian, Wei; Pei, Lizhai; Lin, Nan

doi:10.1380/ejssnt.2016.4

Cited by 3 publications

(3 citation statements)

References 22 publications

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“…NWs have quantum confinement effects due to their diameter at the nanoscale, but the unconstrained length of NWs makes them easy to integrate into the existing devices. Therefore, the potential applications of 1D NWs in various fields (photodetectors [4], biosensors [5], solar cells [6], transistors [7], battery electrodes [8], energy storage [9,10], catalysis [11]) have attracted attention. The research on group IV semiconductor NWs has been of great interest [12,13].…”

Section: Introductionmentioning

confidence: 99%

Research progress of out-of-plane GeSn nanowires

Shen,

Chen,

Sun

2024

Nanotechnology

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As silicon integrated circuits become more and more integrated, traditional electrical interconnections have been their technological limitations, and GeSn materials have attracted a lot of interest due to their potential transition to direct bandgap as well as their compatibility with Si-based technology in recent years. GeSn materials, including GeSn films, GeSn alloys, and GeSn nanowires, are adjustable, scalable, and compatible with silicon. GeSn nanowires, as one-dimensional nanomaterials, including out-of-plane GeSn nanowires and in-plane GeSn nanowires, have different properties from those of bulk materials due to their distinctive structures. However, the former is rarely reported. In this article, we present the preparation of out-of-plane GeSn nanowires using top-down (etching and lithography) and bottom-up (VLS growth mechanism in the vapor-phase method and SFLS, SLS, and SVG growth mechanisms in the liquid-phase method) methods. We also provide a brief description of the applications of out-of-plane GeSn nanowires with various Sn contents and morphologies.

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Section: Introductionmentioning

confidence: 99%

Research progress of out-of-plane GeSn nanowires

Shen,

Chen,

Sun

2024

Nanotechnology

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“…Fortunately, the similarities in crystal structure between Si and Ge simplified the development of bottom-up synthetic techniques and catalytic growth procedures to obtain high-quality Ge nanostructures, and nanowires in particular [ 40 ]. This synthetic progress has been useful not only in nanoelectronic devices [ 41 , 42 , 43 ], but also in other applications fields such as solar energy conversion [ 44 , 45 ], memory applications [ 46 ], biological nanosensors [ 47 , 48 ], catalysis [ 49 ], nanoelectromechanical systems [ 50 ] and energy storage [ 51 , 52 ]. However, Ge possesses an unstable, non-uniform oxide surface on both bulk and nanowire surfaces which gives rise to a poor Ge/GeO x interface characterised by a high density of surface states, limiting its implementation in electronic devices.…”

Section: Introductionmentioning

confidence: 99%

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

2021

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Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. The widely used three-phase bottom-up growth method utilising a foreign catalyst metal or metalloid is by far the most popular for Ge nanowire growth. However, to fully utilise the potential of Ge nanowires, it is important to explore and understand alternative and functional growth paradigms such as self-seeded nanowire growth, where nanowire growth is usually directed by the in situ-formed catalysts of the growth material, i.e., Ge in this case. Additionally, it is important to understand how the self-seeded nanowires can benefit the device application of nanomaterials as the additional metal seeding can influence electron and phonon transport, and the electronic band structure in the nanomaterials. Here, we review recent advances in the growth and application of self-seeded Ge and Ge-based binary alloy (GeSn) nanowires. Different fabrication methods for growing self-seeded Ge nanowires are delineated and correlated with metal seeded growth. This review also highlights the requirement and advantage of self-seeded growth approach for Ge nanomaterials in the potential applications in energy storage and nanoelectronic devices.

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“…Photocatalytic degradation of organic compound and dyes * Corresponding author: ashokborhade2007@yahoo.co.in by semiconductor under UV irradiation after a visible approach to the solution of a variety of environmental problems [18,19], because of their incomplete use and washing operations considerable amount of dyes have been noticed in textile waste water [20]. The photocatalytic degradation of organic dyes were carried out using various inorganic and some organic materials such as Ba 2 TeO(PO 4 ) 2 [21], TiO 2 [22], OCPUFPDA [23], Ce Doped GeO 2 [24]. The organic dyes are found in suspension or dissolved state in the waste water [25].…”

Section: Introductionmentioning

confidence: 99%

Removal of Erioglaucine Dye from Aqueous Medium Using Ecofriendly Synthesized ZnMnO<sub>3 </sub>Photocatalyst

Borhade¹,

Tope²,

Dabhade³

2017

e-J. Surf. Sci. Nanotech.

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The hexagonal nanocrystalline ZnMnO3 powder was prepared from activated mixture by an ecofriendly solid state reaction using mechanochemical method. The synthesized catalyst was characterized by various investigative analytical techniques like Fourier Transform Infrared Spectroscopy (FT-IR), Ultraviolet-diffused reflectance Spectroscopy (UV-DRS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) with EDAX, Transmission Electron Microscopy (TEM) and Brunauer-Emmett-Teller (BET) surface area. The average particle size of ZnMnO3 was found to be 82 nm. The photocatalytic activity of the prepared ZnMnO3 nanoparticles have been investigated by the degradation of Erioglaucine dye. It is revealed that the product exhibits a pronounced photocatalytic activity under the influence of UV-visible light irradiation. The degradation mechanism of Erioglaucine in presence of ZnMnO3 was established by using LC-MS technique.

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Ce Doped Germanium Dioxide Nanowires and Solar Light Photocatalytic Performance

Cited by 3 publications

References 22 publications

Research progress of out-of-plane GeSn nanowires

Research progress of out-of-plane GeSn nanowires

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

Removal of Erioglaucine Dye from Aqueous Medium Using Ecofriendly Synthesized ZnMnO<sub>3 </sub>Photocatalyst

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