CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

Dhar, Nibir K.; Boyd, P. R.; Martinka, M.; Dinan, J. H.; Almeida, L. A.; Goldsman, N.

doi:10.1007/s11664-000-0219-9

Cited by 57 publications

(48 citation statements)

References 16 publications

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“…From in situ XPS, Auger analysis, and temperature-programmed desorption curves, it has been concluded that, during MBE growth of CdTe on Si (211), the step-edge Si atoms remain unaffected even in the presence of an As flux while the terrace Si atoms are replaced by As. 11,12 We propose that a similar surface structure exists during our MOVPE growth, where the As atoms passivate the Ge terrace sites, causing the CdTe nucleation to begin at the step-edge sites, thus enabling step-flow growth and reducing twinning.…”

Section: Resultsmentioning

confidence: 99%

Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Using Ge Interfacial Layer

Rao

Shintri

Bhat

2009

Journal of Elec Materi

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We have achieved metalorganic vapor-phase epitaxial growth of (211)B CdTe on Si without the requirement of a pregrowth high-temperature oxide desorption step. This was achieved by growing a thin Ge film on the starting (211) Si substrates. To get (211)B CdTe orientation, the Ge surface was exposed to As prior to the start of CdTe growth. A thin ZnTe interlayer between Ge and CdTe has been shown to improve the CdTe surface morphology.

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Section: Resultsmentioning

confidence: 99%

Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Using Ge Interfacial Layer

Rao

Shintri

Bhat

2009

Journal of Elec Materi

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“…Step edge geometry of the (211) surface has advantage of having uniform energetically favorable nucleation sites [5,6] (Fig. 1).…”

Section: Mbe Growthmentioning

confidence: 99%

Growth and characterization of CdTe absorbers on GaAs by MBE for high concentration PV solar cells

Arı

Polat

Karakaya

et al. 2015

Phys. Status Solidi C

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CdTe based II‐VI absorbers are promising candidates for high concentration PV solar cells with an ideal band gap for AM1.5 solar radiation. In this study, we propose single crystal CdTe absorbers grown on GaAs substrates with a molecular beam epitaxy (MBE) which is a clean deposition technology. We show that high quality CdTe absorber layers can be grown with full width half maximum of X‐ray diffraction rocking curves (XRD RC) as low as 227 arc‐seconds with 0.5% thickness uniformity that a 2 µm layer is capable of absorbing 99% of AM1.5 solar radiation. Bandgap of the CdTe absorber is found as 1.483 eV from spetroscopic ellipsometry (SE) measurements. Also, high absorption coefficient is calculated from the results, which is ∼5 x 105cm‐1 in solar radiation spectrum. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Therefore GaAs has been a very popular substrate for ZnTe growth by MBE [11,[13][14][15][16]. (2 1 1) is the major orientation for epitaxy of II-VI semiconductors such as CdTe or ZnTe on GaAs or Si [17][18][19] since these high index substrates provide a periodic array of energetically favourable sites at the surface as step edges formed by (1 0 0) crystal planes for initial nucleation in a uniform and regular fashion [20,21]. Additionally the twin defects could be suppressed effectively due to symmetry of the (2 1 1) surface [18] leading to a considerable improvement of crystalline quality [22].…”

Section: Introductionmentioning

confidence: 99%

ZnTe/GaAs(211)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy

Wang

Tari

Sporken

et al. 2011

Applied Surface Science

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a b s t r a c tThin ZnTe layers were grown by molecular beam epitaxy on single crystal GaAs(2 1 1)B substrates. Reflection high energy electron diffraction monitored the deoxidation of substrate and entire growth process. Valence band offset was calculated with X-ray photoelectron spectroscopy. Also interface formation of the ZnTe/GaAs was studied. Analysis shows that interface is abrupt and calculated valance band offset is 0.25 ± 0.1 eV and indicates type I alignment. The experimental result agrees well with the theoretical predictions involving interface dipole effect as well as electron affinity rule.

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CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

Cited by 57 publications

References 16 publications

Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Using Ge Interfacial Layer

Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Using Ge Interfacial Layer

Growth and characterization of CdTe absorbers on GaAs by MBE for high concentration PV solar cells

ZnTe/GaAs(211)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy

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