CdxZn1−xS solid solution thin films, CdS thin films and CdS/ZnS multilayer thin films grown by SILAR technique

Valkonen, Mika P; Lindroos, Seppo; Leskelä, Markku

doi:10.1016/s0169-4332(98)00253-0

Cited by 23 publications

(12 citation statements)

References 30 publications

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“…After heating at 600 C, two reflections were observed at intermediate angular positions (2W = 27.0 and 2W = 28.6 ) between those of a-CdS [33] and a-ZnS [32] , and attributed to the (100) and (002) planes of an a-Zn x Cd 1 ± x S ternary phase. [9,10,12,16,18,21] Since the lattice parameters of Zn x Cd 1 ± x S films follow Vegard's law, [11,15] the system composition could be determined from the 2W value of the (002) reflection [4] and corresponded to Zn 0.90 Cd 0.10 S. No reflections were detected at the positions expected for pure ZnS. Taken together, these data suggest the formation of a homogeneous solid solution.…”

Section: Film Deposition and Characterizationmentioning

confidence: 76%

“…Furthermore, (Zn,Cd)S systems display promising features for use in electroluminescent, photoluminescent, and photoconductive devices. [4,8,10±13] Since the applications of these materials as thin films rely on a careful control of their properties that, in turn, are strongly dependent on the adopted synthetic procedure, several techniques have been used for their preparation, including vacuum evaporation, [14±16] chemical bath deposition (CBD), [7,11,13,17] successive ionic layer adsorption and reaction (SILAR), [10,18,19] and sol±gel. [12] The growth of (Zn,Cd)S thin films by CVD has attracted increasing attention as a possible method for the production of optoelectronic devices under soft preparative conditions.…”

Section: Introductionmentioning

confidence: 99%

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CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions

Barreca¹,

Gasparotto

Maragno

et al. 2004

Chemical Vapor Deposition

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Nanostructured Zn x Cd 1 ± x S (0 £ x £ 1) thin films were synthesized by CVD on SiO 2 substrates using M(Oi PrXan) 2 (M = Zn,Cd; Oi PrXan = S 2 COCH(CH 3 ) 2 ) as precursor compounds. The method of preparation used consisted in the sequential deposition of single-phase MS coatings (M = Zn,Cd) at 300 C in a N 2 flow, followed by ex-situ annealing in an inert atmosphere at various temperatures in the range 400±700 C. The obtained specimens were thoroughly characterized before and after thermal treatments, paying particular attention to their structure, composition, morphology, and optical properties. Annealing in N 2 at 600 C for 3 h resulted in the formation of a homogeneous Zn x Cd 1 ± x S solid solution. Lower temperatures did not produce a uniform sample composition, while more severe annealing conditions induced CdS sublimation. Moreover, a compositional control of the Zn x Cd 1 ± x S ternary phase could be achieved by varying the ZnS overlayer deposition time.Irrespective of the annealing conditions, all the obtained films were contaminant-free and nanophasic (AE »25 nm), and possessed a hexagonal crystal structure the lattice parameters of which decreased linearly with increasing zinc molar fraction. A parallel evolution of optical absorption spectra was also observed. In the present paper, the interrelations between film properties and processing conditions are investigated, focusing particularly on the (Zn,Cd)S evolution to Zn x Cd 1 ± x S solid solutions.

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Section: Film Deposition and Characterizationmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions

Barreca¹,

Gasparotto

Maragno

et al. 2004

Chemical Vapor Deposition

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“…The refractive index was 2.15 -2.35, with a room temperature resistivity of 3 × 10 5 Ω cm. 66,67,75,76 The use of chelating reagents in CdS SILAR deposition has been thoroughly investigated. CdF 2 , CdCl 2, CdI 2 , Cd(ClO 4 ) 2 , Cd(CH 3 COO) 2 , and Cd(HCOO) have been used as precursors together with 2 -mercaptoethylamine, cysteine, ethylenediamine, triethanolamine, or monoethanolamine as chelating reagents, in a 1 : 1 molar ratio.…”

Section: D Smentioning

confidence: 99%

“…The intermixing is mainly from the roughness of the fi lm, not from the chemical mixing by diffusion. 67,68,76,89 SILAR has been used for the synthesis of CdS/ZnS coatings for CdSe quantum dots. The precursor solutions were prepared by dissolving CdO, ZnO, and S in oleic acid and octadecane.…”

Section: D S / Z N S Multilayer Thin Filmsmentioning

confidence: 99%

Successive Ionic Layer Adsorption and Reaction (SILAR) and Related Sequential Solution‐Phase Deposition Techniques

Lindroos

Leskelä

2008

Solution Processing of Inorganic Materials

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“…The surface state of the substrate had an important effect on the SILAR process. Valkonen group has reported that the absorption capability could be enhanced by a buffer layer on the substrate (Valkonen et al, 1998). However, the distribution of the film stress will become heterogeneous, leading to the cracking of the film after introducing a buffer layer between the substrate and the main body film.…”

Section: Introductionmentioning

confidence: 99%

Enhanced tribological performance of CuS thin film on Si substrate: the case of APS-PAA buffer layer

Zhang

2015

Industrial Lubrication and Tribology

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Purpose -The purpose of this paper was to demonstrate the influence of a 3-aminopropyl-triethoxysilane-polyacrylic acid (amino propyl silane (APS)-PAA) buffer layer on the tribological performance of copper sulfide (CuS) thin film on silicon (Si) substrate. Design/methodology/approach -The APS-PAA buffer layer was first deposited on Si substrate by a self-assembling method. Then, the deposited film was coated by a CuS film by a successive ionic layer absorption and reaction (SILAR) method. The structures and morphologies of the prepared films were characterized by X-ray diffraction and atomic force microscopy. The results showed that the prepared CuS film with a PAA-APS double layer had a good crystallinity and surface morphology. The tribological performance of the prepared film was analyzed on UMT-2 tribometer and scanning electric microscope. Findings -With use of an APS-PAA buffer layer, the CuS thin films became compact, smooth and uniform. The tribological performance of the CuS film was greatly enhanced by using an APS-PAA buffer layer. Originality/value -The paper is the first to demonstrate that the CuS film exhibited enhanced structure, morphology and tribological characteristics by using an APS-PAA buffer layer.

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CdxZn1−xS solid solution thin films, CdS thin films and CdS/ZnS multilayer thin films grown by SILAR technique

Cited by 23 publications

References 30 publications

CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions

CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions

Successive Ionic Layer Adsorption and Reaction (SILAR) and Related Sequential Solution‐Phase Deposition Techniques

Enhanced tribological performance of CuS thin film on Si substrate: the case of APS-PAA buffer layer

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