2013
DOI: 10.1051/epjconf/20134104032
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CdTe Nanowires studied by Transient Absorption Microscopy

Abstract: Abstract. Transient absorption measurements were performed on single CdTe nanowires. The traces show fast decays that were assigned to charge carrier trapping at surface states. The observed power dependence suggests the existence of a trap-filling mechanism. Acoustic phonon modes were also observed, which were assigned to breathing modes of the nanowires. Both the fundamental breathing mode and the first overtone were observed, and the dephasing times provide information about how the nanowires interact with … Show more

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Cited by 3 publications
(5 citation statements)
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“…The second conclusion drawn from the PL lifetime experiments is that the lifetimes measured for CdTe QWs with high Φ PL , >200 ns, exceed the radiative lifetime of CdTe QDs, τ rad ∼ 25 ns, which is estimated to be the radiative lifetime for CdTe QWs. These lifetimes are significantly longer than those reported for other colloidal QW samples, <1 ns, which typically have low Φ PL . ,, Following the absorption of a photon with energy well above the band gap energy of a semiconductor QW, the photogenerated electron and hole quickly relax to the lowest-energy quantum-confinement states in the conduction and valence bands, 1Σ e and 1Σ 3/2h . The efficiencies of these relaxation processes are not perfect, however, and the densities of the electron and hole quantum-confinement states, the surface passivation, and local environments of the QWs all have roles in dictating the fraction of the charge carriers that reach the ground states. ,, It is important to emphasize that changes in the PL lifetimes result from dynamics of the charge carriers at the band edge and have little or no dependence on the dynamics incurred while relaxing to the ground state.…”
Section: Discussionmentioning
confidence: 88%
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“…The second conclusion drawn from the PL lifetime experiments is that the lifetimes measured for CdTe QWs with high Φ PL , >200 ns, exceed the radiative lifetime of CdTe QDs, τ rad ∼ 25 ns, which is estimated to be the radiative lifetime for CdTe QWs. These lifetimes are significantly longer than those reported for other colloidal QW samples, <1 ns, which typically have low Φ PL . ,, Following the absorption of a photon with energy well above the band gap energy of a semiconductor QW, the photogenerated electron and hole quickly relax to the lowest-energy quantum-confinement states in the conduction and valence bands, 1Σ e and 1Σ 3/2h . The efficiencies of these relaxation processes are not perfect, however, and the densities of the electron and hole quantum-confinement states, the surface passivation, and local environments of the QWs all have roles in dictating the fraction of the charge carriers that reach the ground states. ,, It is important to emphasize that changes in the PL lifetimes result from dynamics of the charge carriers at the band edge and have little or no dependence on the dynamics incurred while relaxing to the ground state.…”
Section: Discussionmentioning
confidence: 88%
“…These lifetimes are significantly longer than those reported for other colloidal QW samples, <1 ns, which typically have low Φ PL . [27][28][29][30][31]33,34 Following the absorption of a photon with energy well above the band gap energy of a semiconductor QW, the photogenerated electron and hole quickly relax to the lowest-energy quantumconfinement states in the conduction and valence bands, 1Σ e and 1Σ 3/2h . The efficiencies of these relaxation processes are not perfect, however, and the densities of the electron and hole quantum-confinement states, the surface passivation, and local environments of the QWs all have roles in dictating the fraction of the charge carriers that reach the ground states.…”
Section: ■ Discussionmentioning
confidence: 99%
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“…The relaxation dynamics that occur within semiconductor NPs are commonly characterized using transient absorption (TA) spectroscopy to photoexcite the carriers and probe the changes in the absorption spectrum induced by the carriers. ,,,, These TA data are often complicated and difficult to analyze due to overlapping transient signals. In ref , we demonstrated that some of the overlapping induced-absorption (ΔAbs > 0) and bleach (ΔAbs < 0) signals within the TA data are associated with changes in the electron density distribution induced by photoexcitation; these effects are termed quantum-state renormalization (QSR) .…”
Section: Steady-state Optical Spectroscopymentioning
confidence: 99%
“…It should be stressed that the potential of TAM is not limited to studies on the specific material systems and nanostructures highlighted here. This limited review aims at introducing representative results in some detail, but also likes acknowledge existing work on the detection and photophysics of gold and silver nanoparticles and hybrid nanoparticle structures , silver nanocubes , gold nanorods and surface plasmon polariton propagation in gold nanowires , the exciton dynamics in CdTe and CdSe nanowires or ZnO nanorods .…”
Section: Far‐field Tammentioning
confidence: 99%