Cdte and CdZnTe crystal growth by horizontal bridgman technique

Cheuvart, P.; El-Hanani, U.; Schneider, Daniel; Triboulet, R.

doi:10.1016/0022-0248(90)90980-y

Cited by 96 publications

(36 citation statements)

References 5 publications

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“…3 by a photoluminescence spectrum at 4 K. The free exciton was observed and the FWHM of the bound exciton is very low. The resistivity of this sample was 5 x 10 10 Ωcm and the mobilitylifetime-products (µτ-product) were 1.0 x 10 -3 cm²/V and 5 x 10 -5 cm²/V for electrons and holes, respectively.…”

Section: High Resistivity Cdte and (Cdzn)te From Various Sourcesmentioning

confidence: 99%

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Growth of high resistivity CdTe and (Cd,Zn)Te crystals

Fiederle¹,

Babentsov

Franc

et al. 2003

Cryst. Res. Technol.

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The growth of high resistivity CdTe and (Cd,Zn)Te is successfully performed with different kinds of doping. In the literature intentionally undoped as well as doped crystals are presented with resistivities up to 10 10 Ωcm. In this paper we review the growth of high resistivity CdTe and (Cd,Zn)Te. The mechanism of compensation is discussed regarding the different dopants and deep levels, which seem to be responsible for the high resistivity. A common compensation model explains the high resistivity by deep levels. The doping and the influence on the compensation mechanism is compared for several elements like tin, germanium and chlorine. The material properties and the crystal quality of undoped and doped CdTe as well as (Cd,Zn)Te are shown. Dedicated to Professor K. W. Benz on the occasion of his 65th birthday.

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Section: High Resistivity Cdte and (Cdzn)te From Various Sourcesmentioning

confidence: 99%

“…However the crucible, which is generally made of carbon-layered silica glass, causes a number of problems: solid-liquid interface curvature, spurious nucleation of grains and twins, thermal stresses during cooling of the crystal [8,9]. Crystals have also been grown by the horizontal Bridgman technique [10].…”

Section: Introductionmentioning

confidence: 99%

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

Fiederle¹,

Babentsov

Franc

et al. 2003

Cryst. Res. Technol.

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“…One detector is made of HPB CZT provided by eV Products, and the other is horizontal Bridgman (HB) material produced by IMARAD Imaging Systems. 17 Our work with IMARAD HB CZT has shown that is is more uniform than HPB material, and that simple gold contacts greatly reduce leakage current to levels similar to HPB values.…”

Section: 11mentioning

confidence: 84%

<title>Balloon flight background measurement with actively-shielded planar and imaging CZT detectors</title>

et al. 2002

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We present results from the flight of two prototype CZT detectors on a scientific balloon payload in September 2000. The first detector, referred to as "CZT1," consisted of a 10 mm × 10 mm × 2 mm CZT crystal with a single gold planar electrode readout. This detector was shielded by a combination of a passive collimator in the front, giving a 40 degree field of view and surrounded by plastic scintillator, and a thick BGO crystal in the rear. The second detector, "CZT2," comprised two 10 mm × 10 mm × 5 mm CZT crystals, one made of eV Products high pressure Bridgman material and the other of IMARAD horizontal Bridgman material, each fashioned with a 4 × 4 array of gold pixels on a 2.5 mm pitch. The pixellated detectors were flip-chip-mounted side by side and read out by a 32-channel ASIC. This detector was also shielded by a passive/plastic collimator in the front, but used only additional passive/plastic shielding in the rear. Both experiments were flown from Ft. Sumner, NM on September 19, 2000 on a 24 hour balloon flight. Both instruments performed well. CZT1 recorded a non-vetoed background level at 100 keV of ∼ 1 × 10 −3 cts cm −2 s −1 keV −1 . Raising the BGO threshold from 50 keV to ∼ 1 MeV produced only an 18% increase in this level. CZT2 recorded a background at 100 keV of ∼ 4 × 10 −3 cts cm −2 s −1 keV −1 in the eV Products detector and ∼ 6 × 10 −3 cts cm −2 s −1 keV −1 in the IMARAD detector, a difference possibly due to our internal background subtracting procedure. Both CZT1 and CZT2 spectra were in basic agreement with Monte Carlo simulations, though both recorded systematically higher count rates at high energy than predicted. No lines were observed, indicating that neutron capture reactions, at least those producing decay lines at a few 100 keV, are not significant components of the CZT background. Comparison of the CZT1 and CZT2 spectra indicates that passive/plastic shielding may provide adequately low background levels for many applications.

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“…IMARAD CZT crystals are grown by the modified Horizontal Bridgman method 5 . It is a known fact that IMARAD CZT material is slightly N-type material 6 .…”

Section: Czt Crystalsmentioning

confidence: 99%

Multipixel characterization of imaging CZT detectors for hard x-ray imaging and spectroscopy

et al. 2004

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We report our in-depth study of Cd-Zn-Te (CZT) crystals to determine an optimum pixel and guard band configuration for Hard X-ray imaging and spectroscopy. We tested 20x20x5mm crystals with 8x8 pixels on a 2.46mm pitch. We have studied different types of cathode / anode contacts and different pixel pad sizes. We present the measurements of leakage current as well as spectral response for each pixel. Our I-V measurement setup is custom designed to allow automated measurements of the I-V curves sequentially for all 64 pixels, whereas the radiation properties measurement setup allows for interchangeable crystals with the same XAIM3.2 ASIC readout from IDEAS. We have tested multiple crystals of each type, and each crystal in different positions to measure the variation between individual crystals and variation among the ASIC channels. We also compare the same crystals with and without a grounded guard band deposited on the crystal side walls vs. a floating guard band and compare results to simulations. This study was carried out to find the optimum CZT crystal configuration for prototype detectors for the proposed Black-Hole Finder mission, EXIST.

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Cdte and CdZnTe crystal growth by horizontal bridgman technique

Cited by 96 publications

References 5 publications

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

Growth of high resistivity CdTe and (Cd,Zn)Te crystals

<title>Balloon flight background measurement with actively-shielded planar and imaging CZT detectors</title>

Multipixel characterization of imaging CZT detectors for hard x-ray imaging and spectroscopy

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