2008
DOI: 10.1016/j.jelechem.2007.12.009
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CdSe thin film growth: Primarily amorphous nanograins to self-assembled nanowires

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Cited by 20 publications
(7 citation statements)
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“…CdSe was very popular in this field because of their properties with have energy band gap ~ 1.7 e V, and has been considered as n type material and high performance for solar applications [4]. CdSe were chosen because their energy band gap fells within visible spectrum, which is this properties was suitable for application in solar cells [5]. CdSe was an important II-VI semiconducting material due it is optical properties and a high refractive index.…”
Section: Introductionmentioning
confidence: 99%
“…CdSe was very popular in this field because of their properties with have energy band gap ~ 1.7 e V, and has been considered as n type material and high performance for solar applications [4]. CdSe were chosen because their energy band gap fells within visible spectrum, which is this properties was suitable for application in solar cells [5]. CdSe was an important II-VI semiconducting material due it is optical properties and a high refractive index.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, many studies have focused on the investigation of chemical/electrochemical synthesis of CdSe thin films [1][2][3], 2D structures [4] and nanostructures including wires [5,6], rods [7] and dots [8].…”
Section: Introductionmentioning
confidence: 99%
“…The interesting investigations on formation of self-assembled nanorods, nanowires and nanotubes were recently presented in several works [5][6][7].…”
Section: Introductionmentioning
confidence: 99%
“…A number of researchers have demonstrated alloy nanostructures formation using chemical vapour deposition [10], electroless growth [11], electrodeposition [12][13][14][15] etc. However, of these previous methods, it is either complicated or difficult in controlling the size or the shape of the obtained 1-D alloy arrays.…”
Section: Introductionmentioning
confidence: 99%