CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers

Abstract

This letter reports on the self-organized growth of nanoscale dot-like CdSe-based islands during molecular beam epitaxy of CdSe/ZnSe nanostructures with a CdSe thickness between 0.75 and 3.0 monolayers. An increase in the nominal CdSe thickness results in a higher density of islands (up to 2×1010 cm−2) and is accompanied by dramatic enhancement of the photoluminescence efficiency. The density of large relaxed islands appears to saturate at a value of (3–4)×109 cm−2. Room temperature (Zn, Mg)(S, Se)-based optically pumped lasers with an extremely low threshold (less than 4 kW/cm2), as well as (Be, Mg, Zn)Se-based injection laser diodes using a single (2.5–2.8) monolayer thick CdSe active region, both demonstrating significantly enhanced degradation stability, have been fabricated and studied.

Light-Emitting Devices – Luminescence from Low-Dimensional Nanostructures

“…Various methods have been used for the fabrication of nanostructures, like molecular beam epitaxy (MBE) [31,32], sol-gel [33,34], chemical vapor deposition (CVD) [35,36], lithography [37,38], physical vapor deposition (PVD) [39], and chemical methods [40][41]. Among these methods, the low cost and high efficiency technologies have attracted more attention.…”

Quantum dots formed by ultrathin insertions in wide-gap matrices

“…1.3 mm-Emitting GaAs-based lasers with parameters, superior to those in InP-based quantum well (QW) lasers are recently created [3]. With regard to this progress, there are many attempts to apply similar concept to wide-gap lasers based on II±VI material systems and group-III nitrides [4,5]. The CdSe/ZnMgSSe system represents the best choice to study physical mechanisms of lasing in wide-gap compounds and, with regard to the extended history of investigations (for a review see e.g.…”

“…As opposite, for deposition above 0.7 ML formation of large mesoscopic islands with dimensions much larger than exciton Bohrradii is proposed. The density of these islands has believed to be about 3 £ 10 9 cm 22 and the size is of 20±60 nm [4].…”

Резонансный Перенос Энергии В Плотном Массиве II-VI Квантовых Точек

“…Планарные массивы CdSe (CdZnSe) QDs, формируемые в процессе самоор-ганизации при МВЕ-росте, использовались в качестве активной области лазерных структур, возбуждаемых оп-тически [2], электронным лучом [3] и при электрической накачке [4]. Показана также перспективность подобных систем для реализации излучателей неклассического света [5].…”