CdS thin film deposition by CW Nd:YAG laser

Trujillo, Oscar Alfredo Castillo; Moss, R.W.; Vuong, K.D.; Lee, D.H.; Noble, R.; Finnigan, D. J.; Orloff, S.; Tenpas, E.; Park, C.; Fagan, John; Wang, X.W.

doi:10.1016/s0040-6090(96)09065-7

Cited by 28 publications

(17 citation statements)

References 5 publications

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“…[25] Notably, it has been suggested that the 2LO phonons are responsible for the stimulated laser emission at about 515.4 nm (as discussed later) originating from phonon-exciton coupling interactions at room temperature. [30] As compared to previous results obtained for CdS crystals, [31] the Raman peaks of the asprepared CdS nanowires are downshifted by about 5 cm -1 and also show asymmetric broadening. These features likely arise from the confinement of optical phonons in the nanometersized samples, as demonstrated by a spatial correlation model.…”

Section: Full Papersupporting

confidence: 50%

Synthesis and Lasing Properties of Highly Ordered CdS Nanowire Arrays

Cao

Jiang

Wang

et al. 2007

Adv Funct Materials

125

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Highly ordered large‐area arrays of wurtzite CdS nanowires are synthesized on Cd‐foil substrates via a simple liquid reaction route using thiosemicarbazide and Cd foil as the starting materials. The CdS nanowires are single crystals growing along the [001] direction and are perpendicular to the surface of the substrate. The characteristic Raman peaks of CdS are red‐shifted and show asymmetric broadening, which is ascribed to phonon confinement effects arising from the nanoscale dimensions of the nanowires. Significantly, the uniform CdS nanowire arrays can act as laser cavities in the visible‐light range, leading to bandgap lasing at ca. 515 nm with obvious modes. The high density of nuclei and the preferential growth direction induce the formation of aligned CdS nanowires on the metal substrate.

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Section: Full Papersupporting

confidence: 50%

Synthesis and Lasing Properties of Highly Ordered CdS Nanowire Arrays

Cao

Jiang

Wang

et al. 2007

Adv Funct Materials

125

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“…S1(a): supporting information) only shows the d = 0.2069-nm peak of the (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) plane of greenockite (h-CdS mineral; JCPDS 41-1049). The diagrams recorded on fragments of gently crushed platelets ( Fig.…”

Section: Phase Characterizationmentioning

confidence: 99%

“…S1(b): supporting information) confirm that the crystal mainly consists of h-CdS but discontinuous diffraction rings also reveal a dispersion of cubic moieties. The crystal is oriented with c-hexagonal axis in the platelet surface and (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) axis perpendicular to that surface ( Fig. 1).…”

Section: Phase Characterizationmentioning

confidence: 99%

Off‐resonance Raman analysis of wurtzite CdS ground to the nanoscale: structural and size‐related effects

Gouadec

Colomban

et al. 2011

J Raman Spectroscopy

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Different techniques were used to follow the transformation of CdS platelets during grinding and under hydrostatic pressure. X-ray diffraction and transmission electron microscopy revealed that the platelets included zinc blende (cubic) CdS nanodomains dispersed in a wurtzite (hexagonal) single-crystalline matrix. Extended grinding led to a decrease of the grain size and to a progressive transformation of the hexagonal stacking into a cubic one. The same phase transition was observed up to 9 GPa under hydrostatic pressure.Off-resonance Raman spectra collected at different stages of the transition led us to connect band groups that were usually overlooked (in resonance conditions) or considered separately. They all probe the stacking disorder and their intensity can be related to the density of stacking faults. Off-resonance Raman spectroscopy offers a way of probing the optical properties of CdS (and, more generally, layered semiconductors) as a function of the structure and of the confinement of vibrations by structural defects.

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“…Extensive research has been done in the last decades due to its applications in electronic devices like field-effect transistors, solar cells, photoconductors, optical thin films filter, nonlinear integrated optical devices, light emitting diodes (LEDs) and laser heterostructures for emission in the visible spectral range (Trujillo et al 1996;Dai et al 1992;Hernandez-Contrerasa et al 2002;Ullrich et al 2000;Perna et al 2001;Alex 2004). For these purposes, CdS nanostructures have been deposited by different techniques of spray pyrolysis (SP), close space vapor transport (CSVT), vacuum evaporation (Ullrich 2001), chemical bath deposition (CBD), solution growth technique (SGT) (Wang et al 2000), sputtering, chemical vapor deposition (CVD), pulsed laser deposition (PLD) and spin coating technique.…”

Section: Introductionmentioning

confidence: 99%