CdS sintered films: growth and characteristics

Sharma, M.; Kumar, Sushil; Sharma, Luv; Sharma, T.P.; Husain, M.

doi:10.1016/j.physb.2003.08.129

Cited by 21 publications

(18 citation statements)

References 24 publications

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“…3. The energy band gap of this film is determined by plotting a graph between (ahv) 2 or [hm ln(R max À R min )/ (R À R min )] 2 vs (hm), 8,[11][12][13][14][15] as shown in Fig. 4, where hm is the photon energy, the reflection falls from R max to R min due to absorption by the material, and R is the reflectance for any intermediate energy photons.…”

Section: Resultsmentioning

confidence: 99%

Optimization of sintering temperature in CdZnS films using reflection spectroscopy

Kumar¹,

Juneja²,

Sharma

et al. 2009

J Coat Technol Res

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In the present investigation, the polycrystalline films of Cd X Zn 1-X S were prepared using a sintering technique. We coated slurry consisting of CdS, ZnS in the desired proportion-CdCl 2 (as adhesive) and ethylene glycol (as binder)-onto the glass substrates. The films were sintered at a range of temperatures in air atmosphere for the optimization of sintering temperatures using reflection spectroscopy. It was noticed that below 500°C, CdS-dominated films were obtained, and above 500°C, ZnS-dominated films were obtained. The films of desired composition giving appropriate results are obtained at 500°C. The reason is easily understood through reflection spectroscopic studies. Thus, we found 500°C to be the optimum sintering temperature and 10 min was the proper sintering time.

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Section: Resultsmentioning

confidence: 99%

Optimization of sintering temperature in CdZnS films using reflection spectroscopy

Kumar¹,

Juneja²,

Sharma

et al. 2009

J Coat Technol Res

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“…In addition appropriate amount of copper acetate is also mixed in the original mixture. Zn (CH3COOH) 2 and Cd (CH3COOH) 2 provided Zn and Cd respectively whereas Thiourea (NH 2 ) 2 CS gave sulphur for Zn x Cd 1-x S films. The solutions of the compounds used are prepared in double distilled water and films are prepared at a constant temperature of 70 o C in a water bath.…”

Section: Preparation Of Zn X Cd 1-x S Nano Particlesmentioning

confidence: 99%

Photoluminescent studies of nanocrystalline thin films prepared by chemical bath deposition technique

Khare

Pandey

2010

SPIE Proceedings

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Highly transparent nano-sized ZnxCd1-xS thin films have been prepared by chemical bath deposition (CBD) technique.In this paper investigations made on the preparation, characterization and photo luminescent (PL) studies of copper doped ZnxCd1-xS films are presented and discussed. The deposited films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and PL spectroscopic techniques. The results of XRD and SEM studies exhibit the average grain size to lie in nano range. The results of optical absorption spectra recorded in the wavelength range 400 -700 nm, the band gap value is calculated to be ~ 2.57 eV. The PL emission intensity is observed to be maximum for a particular concentration of copper acetate and it almost seizes thereafter.

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“…The II-VI compounds are becoming interesting and important because of their major applications in solar cells [1] and opto-electronic devices [2]. A variety of techniques presently used for the synthesis of cadmium and zinc chalcogenide semiconductor thin films [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Chemosynthesis, characterization and PEC performance of CdZn(SSe)2 thin films by arrested precipitation technique (APT)

Jagadale¹,

Shinde²,

Mane³

et al. 2016

Nanosystems: Phys. Chem. Math.

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In the present work, we have used simple, cost effective arrested precipitation technique (APT) to deposit CdZn(SSe) 2 thin films. Preparative conditions were optimized during the initial stage of experimentation to obtain good quality CdZn(SSe) 2 thin films. The as-deposited film was studied for its structural, morphological, optical, and compositional analysis by XRD, SEM, UV-Vis-NIR spectrophotometer and EDSanalysis techniques respectively. XRD analysis revealed that the film was polycrystalline in nature and exhibit hexagonal crystal structure. The SEM micrograph shows the formation of spherical surface morphology. EDS results confirm the presence of Cd, Zn, S and Se elements in the synthesized thin film. The band gap value of thin film was calculated from the absorption spectra which is found to be 1.8 eV. From J-V measurements, photo-conversion efficiency is found to be 0.07%.

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CdS sintered films: growth and characteristics

Cited by 21 publications

References 24 publications

Optimization of sintering temperature in CdZnS films using reflection spectroscopy

Optimization of sintering temperature in CdZnS films using reflection spectroscopy

Photoluminescent studies of nanocrystalline thin films prepared by chemical bath deposition technique

Chemosynthesis, characterization and PEC performance of CdZn(SSe)2 thin films by arrested precipitation technique (APT)

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