CdS nanocrystals formed in amorphous GeS2:Cd films by photoenhanced diffusion

Azhniuk, Yu. M.; Lopushansky, V. V.; Solonenko, Dmytro; Kryshenik, Volodymyr M.; Loya, Vasyl Y.; Voynarovych, Ivan M.; Gomonnai, A. V.; Zahn, Dietrich R. T.

doi:10.1007/s13204-021-01778-8

Cited by 2 publications

(2 citation statements)

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“…In amorphous As 2 S 3 films doped with Cd or Zn photoenhanced diffusion enabled the dopant atoms, initially randomly distributed in the material, to aggregate together with S atoms, forming CdS or ZnS nanocrystalline phase in an amorphous As 2 S 3 -based matrix. 26,27 Similar effects were observed for related amorphous As-Se-S, 11 As 2 Se 3 28,29 or GeS 2 30 films doped with group II or III elements. Bismuth is isovalent to arsenic; therefore, Bi atoms could be expected to remain in the As atom positions in the glass.…”

Section: Introductionsupporting

confidence: 74%

“…Hence, the appearance of the numerous intense Raman bands is related to a photochemical reaction with ambient oxygen resulting in the formation of one or more arsenate compounds in the illuminated area. Note that in our earlier studies devoted to photostructural transformations on the surface of amorphous arsenic chalcogenides doped with In, Zn, Cd and Sn under illumination by above-bandgap light at even higher P exc values, 11,[26][27][28][29][72][73][74] we have never observed the formation of arsenate units. Evidently, the presence of an ample amount (at least 14 at.…”

Section: Resultsmentioning

confidence: 59%

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Photoinduced transformations in (As_1–xBi_x)₂S₃ glass observed by Raman spectroscopy

Azhniuk,

Lopushansky,

Hasynets

et al. 2024

J Raman Spectroscopy

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Raman spectra of (As1–xBix)2S3 glass samples with x ≤ 0.2 measured at the excitation with above‐bandgap (532 nm) laser light at a relatively low power density (Pexc = 4 kW/cm2) clearly confirm the amorphous character, thereby markedly extending the known compositional interval of existence of the (As1–xBix)2S3 glass previously known (x ≤ 0.06). Spectra measured at an increased Pexc (40 kW/cm2) reveal a photostructural transformation in the illuminated area of the glass leading to an additional contribution of Bi–S bonds as well as to an increasing number of cage‐type As4S4 units with homopolar As–As bonds. A number of new features in a broad range up to about 1,000 cm−1, which emerge in the Raman spectra of the (As1–xBix)2S3 glasses with high (x ≥ 0.14) Bi content and increase in intensity with the exposure time, are related to a photochemical transformation, namely, oxidation of arsenic and sulphur on the (As1–xBix)2S3 glass surface with formation of units containing arsenate AsO43− and sulphate SO42− ions. These processes are irreversible and occur only in the presence of a sufficient amount of bismuth.

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