Cd1-xMnxTe AS A MATERIAL FOR Õ- AND γ-RAY DETECTORS

Kosyachenko, L. A.; Раренко, И. М.; Sklyarchuk, V.; Yurtsenyuk, N. S.; Maslyanchuk, O. L.; Sklyarchuk, O. F.; Zakharuk, Z. I.; Grushko, E. V.

doi:10.18524/1815-7459.2010.3.114584

Cited by 3 publications

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“…It is known that even purest and perfect CdTe single crystals still contain a significant amount of intrinsic point defects and residual impurities with concentration up to cm and even cm [18], [19]. Therefore, it can be assumed that in a Schottky diode based on this material, carrier generation-recombination in the space charge region is the dominant charge transport mechanism [20]. According to the Sah-Noyce-Shockley theory, the generation-recombination current density is described by expression [21]:…”

Section: Transport Properties Of Ni/cdte/ni Diodes At Low Bias Vmentioning

confidence: 99%

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Higher Voltage Ni/CdTe Schottky Diodes With Low Leakage Current

Kosyachenko

Sklyarchuk

et al. 2009

IEEE Trans. Nucl. Sci.

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A significant improvement in electrical characteristics of Schottky diodes designed for X-and-ray detectors has been achieved using semi-insulating CdTe single crystals and unified technology, where both Schottky and near-ohmic contacts were formed by the deposition of the same metal (Ni) on the opposite surfaces of the crystal pre-treated by chemical etching and Ar ion bombardment with different parameters. Reduction of injection of minority carriers from the near-ohmic contact in the neutral part of the diode and high Schottky barrier for holes provides low leakage current even at high bias voltage (50 nA cm 2 at 2000 V and at room temperature). The current-voltage characteristics of the detectors with Ni/CdTe/Ni electrode configuration in the low-voltage range are described by the generation-recombination Sah-Noyce-Shockley theory. The results of the reproducibility and time stability of the fabricated diodes are reported. Index Terms-Charge carrier processes, leakage currents, Schottky diodes, X-and gamma-ray detectors.

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Section: Transport Properties Of Ni/cdte/ni Diodes At Low Bias Vmentioning

confidence: 99%

“…where and are the effective lifetimes of electrons and holes in the space charge region, and are the electron and hole concentrations in the conduction and valence bands, respectively [20]:…”

Section: Transport Properties Of Ni/cdte/ni Diodes At Low Bias Vmentioning

confidence: 99%

Higher Voltage Ni/CdTe Schottky Diodes With Low Leakage Current

Kosyachenko

Sklyarchuk

et al. 2009

IEEE Trans. Nucl. Sci.

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“…The graphical comparison shows that the dependence E 12 9 − g on x for Cd 1-x Mn x Te obtained by various authors are quite close within the range x = 0.2 -0.5 but appreciably different at x = 0 (i.e. for CdTe) within 1.47 -1.53 eV [11]. Our detailed measurements of optical transmission spectra carried out on pure and perfect single crystals of Acrorad Corporation show that the CdTe band gap at 270 -300 K is 1.47 -1.48 eV.…”

Section: Optical Properties Of CD 1-x Mn X Te Crystalsmentioning

confidence: 60%

Energy band gap and electrical conductivity of Cd1–xMnxTe alloys with different manganese content

Kosyachenko¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The optical and electrical properties of single Cd 1-x Mn x Te (x = 0.07 -0.40) crystals with p-type conduction and resistivity 10 4 -10 8 Ohm⋅cm have been studied. The band gaps of the samples and their temperature dependences have been determined. The electrical conductivity of this material and its temperature variation are explained in terms of statistics for electrons and holes in semiconductor with taking into account the compensation process. The energy of ionization and degree of compensation levels responsible for the electrical conductivity of the samples have been found.

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Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates

Ivashchenko¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. In this work, the complex investigation of structural and optical properties of zinc and cadmium selenide semiconductor films deposited by close-spaced vacuum sublimation method using thermal evaporation on non-oriented substrates was carried out. The structural and phase analyses of the layers condensed at different substrate temperatures were performed. The transmission and reflection spectra of the investigated films have been measured and their main optical characteristics have been calculated.

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Cd1-xMnxTe AS A MATERIAL FOR Õ- AND γ-RAY DETECTORS

Cited by 3 publications

References 0 publications

Higher Voltage Ni/CdTe Schottky Diodes With Low Leakage Current

Higher Voltage Ni/CdTe Schottky Diodes With Low Leakage Current

Energy band gap and electrical conductivity of Cd1–xMnxTe alloys with different manganese content

Structural and optical characteristics of ZnSe and CdSe films condensed on non-oriented substrates

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