CCD Imager Technology Development at Lincoln Laboratory

Burke, Barry E.; Gregory, J. A.; Loomis, A.H.; Cook, Chris; Young, Douglas; Cooper, Michael; Lind, Thomas; Tonry, J.

doi:10.1007/978-94-011-4361-5_20

Cited by 8 publications

(3 citation statements)

References 6 publications

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“…The ESI detector (device W62C2) is an MIT/Lincoln Labs CCID20 high-resistivity CCD. For details, see Burke et al (2000). It uses readout amplifiers at both ends of the serial register.…”

Section: Detector and Controllermentioning

confidence: 99%

ESI, a New Keck Observatory Echellette Spectrograph and Imager

Sheinis¹,

Bolte²,

Epps³

et al. 2002

PUBL ASTRON SOC PAC

377

319

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The Echellette Spectrograph and Imager (ESI) is a multipurpose instrument which has been delivered by the Instrument Development Laboratory of Lick Observatory for use at the Cassegrain focus of the Keck II telescope. ESI saw first light on August 29, 1999. ESI is a multi-mode instrument that enables the observer to seamlessly switch between three modes during an observation. The three modes of ESI are: An R=13,000-echellette mode; Low-dispersion prismatic mode; Direct imaging mode. ESI contains a unique flexure compensation system which reduces the small instrument flexure to negligible proportions. Long-exposure images on the sky show FWHM spot diameters of 34 microns (0. ′′ 34) averaged over the entire field of view. These are the best non-AO images taken in the visible at Keck Observatory to date. Maximum efficiencies are measured to be 28% for the echellette mode and greater than 41% for low-dispersion prismatic mode including atmospheric, telescope and detector losses. In this paper we describe the instrument and its development. We also discuss the performance-testing and some observational results.

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“…The ESI detector (device W62C2) is an MIT/Lincoln Labs CCID20 high-resistivity CCD. For details, see Burke et al (2000). It uses readout amplifiers at both ends of the serial register.…”

Section: Detector and Controllermentioning

confidence: 99%

ESI, a New Keck Observatory Echellette Spectrograph and Imager

Sheinis¹,

Bolte²,

Epps³

et al. 2002

PUBL ASTRON SOC PAC

377

319

View full text Add to dashboard Cite

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“…3) necessitates that the junctions be located within a depth of ∼5 nm (where 100 to 200 nm far-UV photons are registered by the detector). Ion-implanted laser annealing and other methods used, for example, in CCD production, affect deeper 75 to 150 nm regions, 17 making the MBE process essential to our UV-optimization approach. The facilities for applying the MBE process to batches of wafers at LL were recently improved to include a Veeco GEN200 cluster tool including reflection high-energy electron diffraction (RHEED) imaging, residual gas analyzer, and electron impact-energy spectroscopy measurements in the growth module, a preparation module, and an x-ray photoelectron spectroscopy analysis chamber.…”

Section: -14mentioning

confidence: 99%

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

Retherford

Bai

Ryu

et al. 2015

J. Astron. Telesc. Instrum. Syst

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Abstract. We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. © The Authors.Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…Its design is based on an imager already developed for adaptive optics applications. 11,12 Figure 1 shows the overall setup of LLiST as it is implemented at IOTA. The CCD is kept in a sealed housing, cooled by a thermo-electric cooler (TEC) and mounted on the so-called sensor board.…”

Section: Camera Propertiesmentioning

confidence: 99%

LLiST: a new-star tracker camera for tip-tilt correction at IOTA

Schüller

Lacasse²,

Lydon

et al. 2004

New Frontiers in Stellar Interferometry

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The tip-tilt correction system at the Infrared Optical Telescope Array (IOTA) has been upgraded with a new star tracker camera. The camera features a backside-illuminated CCD chip offering doubled overall quantum efficiency and a four times higher system gain compared to the previous system. Tests carried out to characterize the new system showed a higher system gain with a lower read-out noise electron level. Shorter read-out cycle times now allow to compensate tip-tilt fluctuations so that their error imposed on visibility measurements becomes comparable to, and even smaller than, that of higher-order aberrations.

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CCD Imager Technology Development at Lincoln Laboratory

Cited by 8 publications

References 6 publications

ESI, a New Keck Observatory Echellette Spectrograph and Imager

ESI, a New Keck Observatory Echellette Spectrograph and Imager

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

LLiST: a new-star tracker camera for tip-tilt correction at IOTA

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