CBE and MOCVD growth of GaInNAs

Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy

“…Incorporating nitrogen remains though a real issue, both for molecular beam epitaxy ͑MBE͒ 6 and metalorganic vapor phase epitaxy ͑MOVPE͒ techniques; the actual low incorporation efficiency requires particular growth conditions, based mainly on low temperatures and low group V source partial pressures, 7 which lead to a generally poorer crystallographic quality of the grown structures.…”

New Developments in Dilute Nitride Semiconductor Research

“…The higher growth temperatures limit the N incorporation where micro-phase segregation begins and makes it extremely challenging to reach the N compositions needed to achieve 0.8-1.0 eV band gap. 19 A new method for synthesizing dilute nitrides was developed during recent years. Nitrogen implantation followed by rapid thermal annealing (RTA) was found to be a practical and convenient method for the formation of diluted III-N-V alloys.…”

SPSLs and Dilute-Nitride Optoelectronic Devices

“…They also observed changes in the hydrogen concentration profile when annealing. However, Spruytte et al Spruytte et al (2001b) group and other people growing nitride-arsenides by solid source MBE (such as the group I am involved with) using an rf plasma Miyamoto et al (2000) observed the same increase of luminescence efficiency with annealing with almost no hydrogen present. Hence, despite the recent laser successes, there is still significant work remaining to tame GaAs-based dilute nitride materials system in order to realize the full wavelength range of high-performance optoelectronic emitters.…”