Research and development of a broad area (> 1 cm diameter), high brightness (-107 A/cm2 rad2), high current density (>50 A/cm2), pulsed electron beam source for high throughput, high resolution (< 0.25 tim) lithography is reported. This novel electron beam source is simple, robust, will cost significantly less than direct write electron beam systems, and allows for high throughput pattern generation (>30 2-3' wafers/hr.). The electron beam is produced by the Back-Lighted Thyratron (BLT) and is transported through a dielectric tube to achieve focusing and collimation. Replication of 10 jtm line structures in PMMA using a nickel grid mask has been achieved. At present, masks comprising of diamond thin film (1-1 .5 tim) membranes on a silicon substrate are being fabricated to study the replication of submicrometer structures in PMMA. In this case, of primary importance are mask heating and deformation. Experiments indicate that the average surface temperature of the diamond thin film does not rise more than 5 K after being irradiated with the electron beam for tens of thousands of pulses at frequencies up to 5 Hz. Theoretical calculations indicate that the instantaneous temperature rise is also negligible (< 60 K).