Causes and elimination of pyramidal defects in GaSb-based epitaxial layers

Murray, L. M.; Yildirim, Asli; Provence, Sydney; Norton, Dennis; Boggess, Thomas F.; Prineas, J. P.

doi:10.1116/1.4792515

Cited by 10 publications

(9 citation statements)

References 32 publications

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“…Precise control of substrate temperature is of principal importance for the ternary AlSb y As 1−y (Sample D) and the quaternary Al x Ga 1−x Sb y As 1−y (Sample E) layers since it directly controls the incorporation ratio of Sb and As and thus the lattice parameter. Growth of Al(Ga)SbAs compounds (Samples D and E) following the hydrogen-assisted oxide removal process enables smooth buffer layers to be grown free of pyramidal defects typically observed on the sur-face of GaSb grown on GaSb [17].…”

Section: Molecular Beam Epitaxy Growth and Device Fabricationmentioning

confidence: 99%

High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport

Thomas

Hatke

Tuaz

et al. 2018

Phys. Rev. Materials

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High mobility, strong spin-orbit coupling, and large Landé g-factor make the two-dimensional electron gas (2DEG) in InAs quantum wells grown on nearly-lattice-matched GaSb substrates an attractive platform for mesoscopic quantum transport experiments. Successful operation of mesoscopic devices relies on three key properties: electrical isolation from the substrate; ability to fully deplete the 2DEG and control residual sidewall conduction with lithographic gates; and high mobility to ensure ballistic transport over mesoscopic length scales. Simultaneous demonstration of these properties has remained elusive for InAs 2DEGs on GaSb substrates. Here we report on heterostructure design, molecular beam epitaxy growth, and device fabrication that result in high carrier mobility and full 2DEG depletion with minimal residual edge conduction. Our results provide a pathway to fully-controlled 2DEG-based InAs mesoscopic devices.

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Section: Molecular Beam Epitaxy Growth and Device Fabricationmentioning

confidence: 99%

High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport

Thomas

Hatke

Tuaz

et al. 2018

Phys. Rev. Materials

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“…In such devices, the performance of every single pixel is crucial for the operation of the entire device. The complex studies on defects reduction in InAs/GaSb superlattices are still carried out by many research groups around the world [ 20 , 21 ]. For example, Walther et al [ 22 ] reported that using a good quality substrate, optimization of the growth, and post-growth processing can result in defects-free single pixels.…”

Section: Introductionmentioning

confidence: 99%

A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping

et al. 2021

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In this paper, he study of defects in InAs/GaSb type-II superlattices using high-resolution an x-ray diffraction method as well as scanning (SEM) and transmission (TEM) electron microscopy is presented. The investigated superlattices had 200 (#SL200), 300 (#SL300), and 400 (#SL400) periods and were grown using molecular beam epitaxy. The growth conditions differed only in growth temperature, which was 370 °C for #SL400 and #SL200, and 390 °C for #SL300. A wings-like diffuse scattering was observed in reciprocal space maps of symmetrical (004) GaSb reflection. The micrometer-sized defect conglomerates comprised of stacking faults, and linear dislocations were revealed by the analysis of diffuse scattering intensity in combination with SEM and TEM imaging. The following defect-related parameters were obtained: (1) integrated diffuse scattering intensity of 0.1480 for #SL400, 0.1208 for #SL300, and 0.0882 for #SL200; (2) defect size: (2.5–3) μm × (2.5–3) μm –#SL400 and #SL200, (3.2–3.4) μm × (3.7–3.9) μm –#SL300; (3) defect diameter: ~1.84 μm –#SL400, ~2.45 μm –#SL300 and ~2.01 μm –#SL200; (4) defect density: 1.42 × 106 cm−2 –#SL400, 1.01 × 106 cm−2 –#SL300, 0.51 × 106 cm−2 –#SL200; (5) diameter of stacking faults: 0.14 μm and 0.13 μm for #SL400 and #SL200, 0.30 μm for #SL300.

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“…They are typically buried with a thick buffer layer and below a diffusion barrier. 24 It is likely such contamination also occurs in the base layers of the NW. In the NW interior, irregularities such as short segment wurtzite/zincblende stacking faults, twin boundaries, and polytypism are commonly observed.…”

mentioning

confidence: 99%

Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs Core–Shell Nanowires Grown on Silicon

Zhang

Dai

et al. 2019

Nano Lett.

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We report on carrier recombination within self-catalyzed InAs/InAlAs core–shell nanowires (NWs), disentangling recombination rates at the ends, sidewalls, and interior of the NWs. Ultrafast optical pump–probe spectroscopy measurements were performed from 77293 K on the free-standing, variable-sized NWs grown on lattice-mismatched Si(111) substrates, independently varying NW length and diameter. We found NW carrier recombination in the interior is nontrivial compared to the surface recombination, especially at 293 K. Surface recombination is dominated by carrier recombination at the NW sidewall, while contributions from the highly strained, impure NW base are negligible.

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Causes and elimination of pyramidal defects in GaSb-based epitaxial layers

Abstract: Electrical properties and deep traps spectra of N-polar and Ga-polar AlGaN films grown by molecular beam epitaxy in a wide composition range

Cited by 10 publications

References 32 publications

High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport

High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport

A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping

Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs Core–Shell Nanowires Grown on Silicon

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