“…This may lead to altering the band structure by introducing donor and/or acceptor levels, which may be broad enough to cause their overlap with both conduction and valence bands, giving rise to properties of "bad metal" and, provided the optimal tuning is achieved, to metal-to-semiconductor transition. As a result of this strategy, combination of S = 170 μV × K , which is almost four orders of magnitude greater than that for ideally stoichiometric compound Si 30 P 16 Te 8 [30,32].…”