Cathodoluminescence of radiative centers in wide-bandgap materials

In this paper the effect of unstable luminescence in nitrides was studied, notably the phenomena of cathodoluminescent intensity rising under stationery electron beam irradiation with typical times of tens up to hundreds of seconds. Long-lasting impact by electron beam leads to changes of cathodoluminescence properties of irradiated area. The changes still remain even after keeping structures at room temperature for several days. Reversibility of this "memory effect" was examined. A model of effect observed was proposed and experimentally verified.

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“…4). It is important to notice that the probability of trapping depends both on capture crosssection and on electron beam current [13].…”

Section: Resultsmentioning

confidence: 99%

“…The probability of charge carrier trapping depends on the electron beam density J and capturing cross-section L [13]. Then formula (1) alters…”

Section: Resultsmentioning

confidence: 99%

Unstable Luminescence and "Memory Effect" in Nitrides Irradiated by Electron Beam

Kuznetsova

Zamoryanskaya

2013

SSP

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“…Cathodoluminescence is the light emission following excitation of the matter by an electron beam [39]. Exposure of a solid to an electron beam with several keV in energy induces a number of processes in the specimen, which lead to the formation of secondary and backscattered electrons, and generate also characteristic radiation and X-ray, and Auger electrons.…”

Section: B) Cathodoluminescence (Or Electron Beam Induced Luminescence)mentioning

confidence: 99%

Advanced Characterization Techniques Based on Luminescence in XLPE and Modified XLPE

Teyssèdre

Laurent

Qiao

2021

Materials Horizons: From Nature to Nanomaterials

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Crosslinked Polyethylene finds application in the insulation of high voltage cables, constituting a high demanding domain in terms of electrical performances. High quality XLPE grades are now produced for insulation under high voltage direct current (HVDC) stress. Luminescence techniques have constituted original techniques along the development of such materials, particularly as regards the role of defects and residues in the behavior of materials in terms of electrical charges stabilization. Luminescence provides a family of extremely sensitive techniques, though limited to substances with unsaturated groups: in materials like XLPE only additives, residues and defects are optically active. After recalling the grounds of luminescence principles in organic materials, we explain the techniques implemented, mainly based on photoluminescence and on an analysis of optical emissions related to charge traps into materials. The main results obtained with the identification of the role of these 'defects' are presented before addressing the knowledge brought by luminescence methods, including electroluminescence, on thermal and electrical ageing aspects of polyethylene materials.

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“…Since the report of the first lightemitting device, produced with this class of materials by Destriau [1,2], similar studies have been carried out. The main motivation is the wide applicability of some of these phosphor materials, e.g., in a.c. thin film light-emitting devices (ACTFEL) [3], in field emission displays (FED) [4], in cathodic ray tubes [5] (CRT) and in d.c. thin film devices (DCTFEL) [6]. In these materials, electroluminescence occurs as a result of the collision of energetic electrons with the light-emitting centres (light-emitting atoms).…”

Section: Introductionmentioning

confidence: 99%

A study of the electroluminescence mechanism in a light-emitting composite produced with PEDOT:PSS, PVA and Zn2SiO4:Mn

Gozzi

2018

Optical Materials

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Light-emitting composites are materials that combine the light-emitting characteristic of phosphor materials with the solubility of conductive polymers. This paper has the purpose of showing an experimental study on electroluminescence in a light-emitting composite comprising PEDOT:PSS as the conductive polymer and Zn 2 SiO 4 :Mn as the phosphor material. The relationship between d.c. current and voltage, as well as luminance and voltage, of light-emitting devices were measured for different active layer thickness and different temperature conditions. Luminance was also measured during impedance spectroscopy experiments (a.c. characterization). It was observed that the electroluminescence in the studied light-emitting composite is a field effect mechanism, with turn-on electric field of (4.6 ± 0.2) kV/cm, and that the electroluminescence efficiency is independent of temperature. Additionally, it was observed that electroluminescence is strictly dependent on the drift current of charge carriers. Finally, a model was proposed to describe the electrical properties and luminance of the studied light-emitting composite.

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Cathodoluminescence of radiative centers in wide-bandgap materials

Cited by 11 publications

References 5 publications

Unstable Luminescence and "Memory Effect" in Nitrides Irradiated by Electron Beam

Unstable Luminescence and "Memory Effect" in Nitrides Irradiated by Electron Beam

Advanced Characterization Techniques Based on Luminescence in XLPE and Modified XLPE

A study of the electroluminescence mechanism in a light-emitting composite produced with PEDOT:PSS, PVA and Zn2SiO4:Mn

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